CZT3055 TR PBFREE

Description：TRANS NPN/AMPLIFIER SWITCH
Series：-

SKU:c7d65c283b31 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

CZT3055 TR PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS NPN/AMPLIFIER SWITCH. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for CZT3055 TR PBFREE

Description：TRANS NPN/AMPLIFIER SWITCH
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for CZT3055 TR PBFREE

CZT3055 TR PBFREE

Single Bipolar Transistors Overview

The CZT3055 TR PBFREE is a surface-mount NPN silicon power transistor manufactured by Central Semiconductor Corp. It utilizes an epitaxial base process and is housed in a SOT-223 package. The device supports a continuous collector current of 6.0 A and features a collector-emitter voltage rating of 60 V. Designed for high-power applications, it offers a maximum power dissipation of 2.0 W with a thermal resistance of 62.5 °C/W. The component operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

Manufactured using an epitaxial base process for enhanced performance
Designed specifically for surface-mounted power amplifier applications
Features a four-terminal SOT-223 case configuration

Single Bipolar Transistors Applications

Surface mounted power amplifier circuits
High-current switching applications
Complementary transistor pairs (paired with CZT2955)

Single Bipolar Transistors Procurement Notes

Verify the End-of-Life status before procurement. Last purchase orders must be placed within six months of the official notice date, with final shipments occurring twelve months after that date. Minimum order quantities may apply during this transition period. Confirm availability through authorized distributors or direct manufacturer inquiry channels.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a 6.0 A NPN power transistor in a compact surface-mount footprint. Ensure the circuit design accommodates the 62.5 °C/W thermal resistance and 2.0 W power dissipation limits. Verify compatibility with complementary PNP devices if utilizing push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor CZT series of surface mount epoxy molded complementary silicon transistors. It serves as the NPN counterpart to the CZT2955 PNP transistor. Both devices share identical mechanical outlines and are intended for use in matched pairs for power amplification tasks.