DAP222T1G

Diode Arrays Overview

The DAP222T1G is a common anode silicon dual switching diode manufactured by onsemi. It features a peak reverse voltage of 80 V and a maximum forward current of 100 mA. The device exhibits a fast recovery time of 4 ns and a low reverse leakage current of 100 nA. It operates within a temperature range of -55°C to +150°C and is housed in the SC-75-3 (SOT-416) surface-mount package.

Diode Arrays Feature Summary

• Common anode configuration for dual diode applications
• Ultra-high speed switching capability with 4 ns recovery time
• Low power consumption suitable for space-constrained designs

Diode Arrays Applications

• High-speed signal switching circuits
• Logic level translation interfaces
• Clamping and protection in digital systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix T1G against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the component matches the required SC-75-3 footprint and pinout for your PCB layout. Cross-reference the RoHS declaration with current environmental regulations before finalizing procurement.

Diode Arrays Selection Notes

Select this component when a compact dual diode solution with common anode topology is required. The SC-75-3 package offers a small form factor ideal for dense surface-mount assemblies. Consider the 80 V reverse voltage rating and 100 mA forward current limits to ensure adequate headroom for the target application circuit.

Diode Arrays Part Context

This part belongs to the DAP222 series of common anode silicon dual switching diodes. It is designed for ultra-high speed switching applications where board space is limited. The device utilizes epitaxial planar technology to achieve fast recovery characteristics while maintaining low capacitance for high-frequency performance.

Diode Arrays Replacement Considerations

DAP222M is listed as a similar level replacement with the same pinout and package, though it may be subject to end-of-life status.