DD1000S33HE3BOSA1

Description：DIODE MODULE GP 3300V AGIHVB1303
Series：-

SKU:dcbf3863ef12 Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

DD1000S33HE3BOSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 3300V AGIHVB1303. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD1000S33HE3BOSA1

Description：DIODE MODULE GP 3300V AGIHVB1303
Series：-
Mfr：Infineon Technologies
Package：Tray
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：3300 V
Current - Average Rectified (Io) (per Diode)：1000A (DC)
Voltage - Forward (Vf) (Max) @ If：3.85 V @ 1000 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-IHVB130-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for DD1000S33HE3BOSA1

DD1000S33HE3BOSA1

Diode Arrays Overview

The DD1000S33HE3 is an IHM-B module diode rated for a repetitive peak reverse voltage of 3300 V and a continuous DC forward current of 1000 A. It features an AlSiC base plate, isolated housing with CTI > 600, and operates between -40°C and +150°C. The unit weighs 800 g.

Diode Arrays Feature Summary

High thermal cycling capability provided by the AlSiC base plate
Isolated housing structure with high comparative tracking index
Low switching losses optimized for high-power inverter applications

Diode Arrays Applications

Medium voltage converters
Motor drives
Traction drives
UPS systems
Wind turbines

Diode Arrays Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific packaging or qualification variants. Ensure compatibility with the FZ1000R33HE3 IGBT switch module for accurate dynamic performance data validation before integration into final designs.

Diode Arrays Selection Notes

Select this component for high-voltage industrial environments requiring robust thermal stability. The AlSiC substrate supports demanding thermal cycling conditions. Confirm that system requirements align with the 3300 V blocking capability and 1000 A nominal current limits.

Diode Arrays Part Context

This device belongs to the IHM-B module series designed for high-power semiconductor applications. It utilizes advanced silicon technology within a ruggedized housing to ensure reliability under extreme electrical and thermal stress conditions typical of heavy-duty power electronics.