DD500S33HE3BOSA1

Description：DIODE MODULE GP 3300V AGIHVB1303
Series：-

SKU:6f0ead83de30 Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

DD500S33HE3BOSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 3300V AGIHVB1303. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD500S33HE3BOSA1

Description：DIODE MODULE GP 3300V AGIHVB1303
Series：-
Mfr：Infineon Technologies
Package：Tray
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：3300 V
Current - Average Rectified (Io) (per Diode)：500A (DC)
Voltage - Forward (Vf) (Max) @ If：3.85 V @ 500 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-IHVB130-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for DD500S33HE3BOSA1

DD500S33HE3BOSA1

Diode Arrays Overview

The DD500S33HE3 is a Diode, Inverter module within the IHM-B series. It features a repetitive peak reverse voltage of 3300 V and a continuous DC forward current of 500 A. The maximum power dissipation is 800 kW at a junction temperature of 125°C. Operating temperatures range from -40°C to +150°C. The module utilizes an AlSiC base plate for enhanced thermal cycling capability and provides high DC stability.

Diode Arrays Feature Summary

AlSiC base plate construction for increased thermal cycling capability
High DC stability ensuring reliable operation under varying conditions
Low switching losses optimized for inverter applications
Isolated base plate with a comparative tracking index exceeding 600

Diode Arrays Applications

Medium voltage converters
Motor drives
Traction drives
UPS systems
Wind turbines

Diode Arrays Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing lot or packaging variations. Ensure compatibility with the FZ500R33HE3 IGBT switch module, as dynamic data specifications are valid only when used in conjunction with this specific counterpart component.

Diode Arrays Selection Notes

Select this module for high-power inverter topologies requiring robust thermal management. The AlSiC substrate supports demanding thermal cycling environments. Confirm that system insulation requirements align with the 6.0 kV isolation test voltage rating and verify mounting torque specifications for M6 and M4/M8 terminals during integration.

Diode Arrays Part Context

This component belongs to the IHM-B (IGBT High-Power Module) family designed for industrial and traction sectors. It serves as the freewheeling diode counterpart to the FZ500R33HE3 IGBT switch. The module integrates into high-voltage power conversion systems where high current density and thermal reliability are critical operational parameters.