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DG403BDY-T1 is listed in the Analog Switches, Multiplexers, Demultiplexers range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is IC SW SPST-NO/NCX4 45OHM 16SOIC. Review the specifications below when checking this part for your BOM.
The DG403BDY-T1 is a low-power, high-speed CMOS analog switch manufactured by Vishay Siliconix. It features four independent SPST switches in NO/NC combinations within a 16-pin narrow SOIC package. The device supports single or dual power supplies with a maximum rating of 44 V and an analog signal range up to ±15 V. Key electrical parameters include a maximum on-resistance of 45 Ω, turn-on time of 150 ns, and turn-off time of 100 ns. Operating temperature ranges from -40 °C to +85 °C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and lead-free termination specifications. Review datasheet revision history for any updates to absolute maximum ratings or thermal derating requirements before finalizing procurement orders.
Select this component when four independent analog switching paths are required in a compact surface-mount package. Ensure the application voltage does not exceed the 44 V absolute maximum rating. Verify that the 150 ns switching speed meets system timing constraints and that the 45 Ω on-resistance is acceptable for the load current requirements.
This part belongs to the DG401B/DG403B/DG405B series of low-power analog switches. It serves as a modern replacement for legacy DG401/403/405 devices, offering improved performance characteristics such as faster switching speeds and lower power consumption while maintaining compatibility with existing pinouts and applications.
DG403BDY-E3: Lead-free version with identical electrical specifications and pinout configuration.
The DG403B guarantees break-before-make switching action due to its specific NO/NC switch pair configuration, preventing momentary short circuits during state transitions.
Signals on source (S) or drain (D) terminals exceeding V+ or V- will be clamped by internal diodes. Designers must limit forward diode current to maximum ratings to prevent damage.
The typical charge injection is 60 pC under test conditions of CL = 10,000 pF and Rgen = 0 Ω at room temperature.
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