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DG444DY-E3 is listed in the Analog Switches, Multiplexers, Demultiplexers range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is IC SWITCH SPST-NCX4 85OHM 16SOIC. Review the specifications below when checking this part for your BOM.
The DG444DY-E3 is a monolithic quad single-pole single-throw (SPST) normally closed CMOS analog switch manufactured by Vishay Siliconix. It operates on a high-voltage silicon-gate process with an epitaxial layer to prevent latchup. The device supports single supplies from +5 V to +36 V and dual supplies from ±5 V to ±20 V. Key electrical parameters include a maximum drain-source on-resistance of 85 Ω at room temperature, rising to 100 Ω across the full operating range. Typical turn-on time is 120 ns, with a maximum of 250 ns under dual supply conditions. Leakage current is typically 80 pA, and power consumption is approximately 22 nW.
Verify that the ordering suffix 'E3' corresponds to lead-free and RoHS compliance as specified in the manufacturer's documentation. Confirm the package type matches the narrow SOIC-16 footprint requirements for the target PCB layout. Ensure the component status is active before finalizing procurement plans.
Select this part when a normally closed state is required upon initialization or logic low input. Compare against the DG445 if a normally open configuration is needed instead. Verify that the 85 Ω on-resistance meets the signal integrity requirements for the specific application voltage levels.
This component belongs to the DG444/DG445 family of quad SPST analog switches. It serves as a direct upgrade replacement for legacy DG211 sockets. The device shares functional similarities with the DG445 but differs in its default switch state, being normally closed rather than normally open.
DG445DY-E3: Identical specifications except for normally open configuration.
The DG444 features a normally closed (NC) function, meaning the switches are ON when the logic input is LOW.
It is built on a high-voltage silicon-gate process that includes an epitaxial layer specifically designed to prevent latchup.
The typical charge injection is -1 pC, measured with CL = 1 nF and VS = 0 V.
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