RF Diode DME2031-000 product image

DME2031-000

$7.99
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME

SKU:8589ab35c7d5 Category: Brand:

  
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DME2031-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DME2031-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - 1 Bridge
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DME2031-000

DME2031-000

RF Diode Overview

The DME2031-000 is a beam-lead silicon Schottky barrier mixer diode from Skyworks Solutions, categorized as a medium-drive device. It is configured as a bridge quad and designed for Ku-band applications (12.4 to 18.0 GHz). The component features a maximum junction capacitance of 0.15 pF at 0 V and a series resistance of 13 Ω at 5 mA. Forward voltage specifications range from 350 mV to 450 mV at 1 mA. The device operates within an ambient temperature range of -65°C to +175°C with a continuous wave power dissipation limit of 75 mW per junction.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with low capacitance junctions
  • Statistical Process Control wafer fabrication ensures uniformity and close impedance control
  • Low parasitics and low intermodulation distortion suitable for balanced mixer configurations

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • Ku-band mixers
  • Modulators
  • High-speed switches

RF Diode Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before implementation. Confirm that the Ku-band frequency range aligns with the system requirements. Ensure electrostatic discharge precautions are strictly followed during handling and assembly to prevent damage to the sensitive beam-lead structure.

RF Diode Selection Notes

Select this part when a medium local oscillator drive level is required for Ku-band operations. The bridge quad configuration provides four diodes in a single package, simplifying circuit layout for double-balanced mixer designs. Compare the 13 Ω series resistance and 0.15 pF capacitance limits against other frequency bands if broader bandwidth coverage is needed.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The 'DME' prefix specifically denotes a medium-drive characteristic, distinguishing it from low-drive (DMF) and high-drive (DMJ) variants. The 'quad' designation indicates the internal arrangement of four diodes, facilitating complex mixer topologies without requiring multiple discrete components.

RF Diode Replacement Considerations

Skyworks DME2031-000

RF Diode FAQ

What is the maximum operating frequency for the DME2031-000?

The device is specified for the Ku-band, which covers frequencies from 12.4 GHz to 18.0 GHz.

How is the DME2031-000 electrically configured?

It is configured as a bridge quad containing four N-type Schottky diodes.

What is the absolute maximum power dissipation rating?

The continuous wave power dissipation is rated at 75 mW per junction.

DME2031-000DME2031-000
$7.99
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