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DME2031-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.
The DME2031-000 is a beam-lead silicon Schottky barrier mixer diode from Skyworks Solutions, categorized as a medium-drive device. It is configured as a bridge quad and designed for Ku-band applications (12.4 to 18.0 GHz). The component features a maximum junction capacitance of 0.15 pF at 0 V and a series resistance of 13 Ω at 5 mA. Forward voltage specifications range from 350 mV to 450 mV at 1 mA. The device operates within an ambient temperature range of -65°C to +175°C with a continuous wave power dissipation limit of 75 mW per junction.
Verify the specific datasheet revision against the manufacturer's official documentation before implementation. Confirm that the Ku-band frequency range aligns with the system requirements. Ensure electrostatic discharge precautions are strictly followed during handling and assembly to prevent damage to the sensitive beam-lead structure.
Select this part when a medium local oscillator drive level is required for Ku-band operations. The bridge quad configuration provides four diodes in a single package, simplifying circuit layout for double-balanced mixer designs. Compare the 13 Ω series resistance and 0.15 pF capacitance limits against other frequency bands if broader bandwidth coverage is needed.
This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The 'DME' prefix specifically denotes a medium-drive characteristic, distinguishing it from low-drive (DMF) and high-drive (DMJ) variants. The 'quad' designation indicates the internal arrangement of four diodes, facilitating complex mixer topologies without requiring multiple discrete components.
Skyworks DME2031-000
The device is specified for the Ku-band, which covers frequencies from 12.4 GHz to 18.0 GHz.
It is configured as a bridge quad containing four N-type Schottky diodes.
The continuous wave power dissipation is rated at 75 mW per junction.
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