RF Diode DMF2012-000 product image

DMF2012-000

$7.99
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DMF

SKU:403fe0ba6fec Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

DMF2012-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DMF2012-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DMF
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - Ring
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DMF2012-000

DMF2012-000

RF Diode Overview

The Skyworks DMF2012-000 is a beam-lead silicon Schottky barrier mixer diode configured as a ring quad. It operates in the Ku band (12.4 to 18.0 GHz). Key electrical specifications include a maximum junction capacitance of 0.15 pF at 0 V and 1 MHz, a series resistance of 13 Ω at 5 mA, a breakdown voltage of 2 V at 10 μA, and a forward voltage ranging from 260 to 330 mV at 1 mA. The device supports low drive levels and utilizes outline drawing 488-002.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges for low capacitance junctions
  • Statistical process control wafer fabrication ensures uniformity
  • Low parasitics suitable for balanced mixer configurations

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • Ku-band mixers
  • Detectors
  • Modulators
  • High-speed switches

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and configuration. Confirm RoHS compliance status and lead material specifications prior to procurement. Ensure ESD protection protocols are followed during handling due to device sensitivity.

RF Diode Selection Notes

Select this component for Ku-band applications requiring low local oscillator drive levels. Compare the specified capacitance and series resistance against circuit requirements for impedance matching. Verify that the forward voltage range aligns with the available drive power in the system design.

RF Diode Part Context

This part belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The 'DMF' designation indicates an N-type low drive device. The 'quad' configuration integrates four diodes into a single package for use in balanced or double-balanced mixer topologies.

RF Diode Replacement Considerations

Other parts within the DME, DMF, and DMJ series may serve as alternatives if they match the required frequency band, drive level, and physical package outline. Verify electrical parameters such as capacitance and series resistance before substitution.

DMF2012-000DMF2012-000
$7.99
Buy Now

Recent News