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DSEC16-02A is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE ARRAY GP 200V 8A TO-220-3. Review the specifications below when checking this part for your BOM.
The IXYS DSEC16-02A is a HiPerFRED epitaxial diode featuring a common cathode configuration in a TO-220 AB package. It offers an average forward current of 8 A per diode and a repetitive peak reverse voltage of 200 V. The device exhibits a very short reverse recovery time of 25 ns with soft recovery behavior, minimizing switching losses and EMI. Maximum ratings include a 35 A RMS current and a 60 W total power dissipation at 25°C case temperature.
Verify the component status before procurement as the datasheet explicitly states this part is not recommended for new designs. Confirm that the verified replacement, DPG20C200PB, meets all system requirements. Ensure sourcing channels provide authentic IXYS products to avoid counterfeit components. Check for any updated regulatory compliance documentation if required for your specific application region.
Select this component for applications requiring fast switching with low reverse recovery charge. The common cathode design simplifies circuit layout for half-bridge or full-bridge configurations. Consider the thermal resistance values when designing heat sinks, noting the junction-to-case resistance. Evaluate the soft recovery characteristics against noise sensitivity requirements in sensitive analog or RF environments.
This device belongs to the IXYS HiPerFRED family of fast recovery epitaxial diodes. These components are engineered for high-efficiency power conversion where switching speed and reliability are critical. The TO-220 AB package provides a standard mounting interface compatible with common heatsinking solutions used in industrial and consumer power electronics.
The datasheet identifies the DPG20C200PB as the recommended replacement. Verify pinout compatibility and thermal characteristics when substituting. Ensure the alternative device meets the same voltage and current ratings for your specific circuit design.
The typical reverse recovery time (trr) is 25 ns under test conditions of IF = 1 A, -di/dt = 50 A/µs, VR = 30 V, and TJ = 25°C.
Yes, the device is avalanche voltage rated for reliable operation, with a specified non-repetitive avalanche energy (EAS) of 0.5 mJ at TVJ = 25°C.
The maximum operating junction temperature (TVJM) is 175°C, with a storage temperature range from -55°C to +150°C.
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