Diode Arrays DSEC16-02A product image

DSEC16-02A

$0.93
  • Description:DIODE ARRAY GP 200V 8A TO-220-3
  • Series:HiPerFRED™

SKU:1cac1ea764e5 Category: Brand:

  
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DSEC16-02A is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE ARRAY GP 200V 8A TO-220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DSEC16-02A

  • Description:DIODE ARRAY GP 200V 8A TO-220-3
  • Series:HiPerFRED™
  • Mfr:IXYS
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):8A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):25 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DSEC16-02A

DSEC16-02A

Diode Arrays Overview

The IXYS DSEC16-02A is a HiPerFRED epitaxial diode featuring a common cathode configuration in a TO-220 AB package. It offers an average forward current of 8 A per diode and a repetitive peak reverse voltage of 200 V. The device exhibits a very short reverse recovery time of 25 ns with soft recovery behavior, minimizing switching losses and EMI. Maximum ratings include a 35 A RMS current and a 60 W total power dissipation at 25°C case temperature.

Diode Arrays Feature Summary

  • Planar passivated chips for robust performance
  • Soft reverse recovery behavior to reduce electromagnetic interference
  • Low reverse recovery charge (IRM) values
  • Epoxy encapsulation meeting UL 94V-0 flammability rating

Diode Arrays Applications

  • Antiparallel diodes for high-frequency switching devices
  • Free-wheeling diodes in converters and motor control circuits
  • Rectifiers in switch-mode power supplies (SMPS)
  • Snubber diodes and antisaturation protection
  • Inductive heating and uninterruptible power supplies (UPS)

Diode Arrays Procurement Notes

Verify the component status before procurement as the datasheet explicitly states this part is not recommended for new designs. Confirm that the verified replacement, DPG20C200PB, meets all system requirements. Ensure sourcing channels provide authentic IXYS products to avoid counterfeit components. Check for any updated regulatory compliance documentation if required for your specific application region.

Diode Arrays Selection Notes

Select this component for applications requiring fast switching with low reverse recovery charge. The common cathode design simplifies circuit layout for half-bridge or full-bridge configurations. Consider the thermal resistance values when designing heat sinks, noting the junction-to-case resistance. Evaluate the soft recovery characteristics against noise sensitivity requirements in sensitive analog or RF environments.

Diode Arrays Part Context

This device belongs to the IXYS HiPerFRED family of fast recovery epitaxial diodes. These components are engineered for high-efficiency power conversion where switching speed and reliability are critical. The TO-220 AB package provides a standard mounting interface compatible with common heatsinking solutions used in industrial and consumer power electronics.

Diode Arrays Replacement Considerations

The datasheet identifies the DPG20C200PB as the recommended replacement. Verify pinout compatibility and thermal characteristics when substituting. Ensure the alternative device meets the same voltage and current ratings for your specific circuit design.

Diode Arrays FAQ

What is the typical reverse recovery time for the DSEC16-02A?

The typical reverse recovery time (trr) is 25 ns under test conditions of IF = 1 A, -di/dt = 50 A/µs, VR = 30 V, and TJ = 25°C.

Is the DSEC16-02A suitable for avalanche operation?

Yes, the device is avalanche voltage rated for reliable operation, with a specified non-repetitive avalanche energy (EAS) of 0.5 mJ at TVJ = 25°C.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TVJM) is 175°C, with a storage temperature range from -55°C to +150°C.

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