Diode Arrays DSEC30-02A product image

DSEC30-02A

$1.73
  • Description:DIODE ARRAY GP 200V 15A TO-247AD
  • Series:HiPerFRED™

SKU:e85831e823f5 Category: Brand:

  
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DSEC30-02A is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE ARRAY GP 200V 15A TO-247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DSEC30-02A

  • Description:DIODE ARRAY GP 200V 15A TO-247AD
  • Series:HiPerFRED™
  • Mfr:IXYS
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:1.05 V @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):25 ns
  • Current - Reverse Leakage @ Vr:100 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DSEC30-02A

DSEC30-02A

Diode Arrays Overview

The IXYS DSEC30-02A is a HiPerFRED epitaxial diode featuring a common cathode configuration and soft recovery characteristics. It utilizes an international standard TO-247 AD package with planar passivated chips. The device supports a maximum repetitive reverse voltage of 200 V and a continuous forward current of 30 A at 115°C case temperature. Key electrical parameters include a peak reverse recovery time of 25 ns, a maximum surge current of 140 A, and a junction temperature range from -55°C to +175°C.

Diode Arrays Feature Summary

  • Soft reverse recovery behavior designed to minimize electromagnetic interference and radio frequency interference.
  • Extremely low switching losses combined with very short recovery times for high-frequency efficiency.
  • Low peak reverse recovery current reduces power dissipation within the diode and turn-on loss in commutating switches.
  • Avalanche voltage rated structure ensures reliable operation under transient conditions.

Diode Arrays Applications

  • Antiparallel diode for high frequency switching devices
  • Free wheeling diode in converters and motor control circuits
  • Rectifiers in switch mode power supplies (SMPS)
  • Snubber diode applications
  • Inductive heating systems

Diode Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the specific suffix matches the required voltage and current ratings. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values. Review compliance documentation for epoxy flammability ratings and package dimensions prior to integration into final assemblies.

Diode Arrays Selection Notes

Select this component when designing circuits requiring fast switching speeds with minimal reverse recovery charge. The TO-247 package facilitates efficient heat dissipation for high-current applications. Consider the soft recovery profile to reduce stress on parallel switching devices. Evaluate thermal constraints based on the specified case temperature limits for continuous forward current derating.

Diode Arrays Part Context

This component belongs to the HiPerFRED series of epitaxial diodes manufactured by IXYS. The series focuses on high-efficiency power conversion applications utilizing advanced epitaxial growth techniques. These diodes are engineered to provide superior performance compared to standard recovery diodes, specifically targeting high-frequency power electronics markets.

Diode Arrays Replacement Considerations

The official recommended replacement identified in the datasheet is the DPG 30C200HB. Verify pinout compatibility and thermal characteristics before substitution.

Diode Arrays FAQ

What is the typical peak reverse recovery time for the DSEC30-02A?

The typical peak reverse recovery time is 25 ns under test conditions of IF = 1 A, -di/dt = 100 A/µs, VR = 30 V, and TVJ = 25°C.

How does the soft recovery feature benefit circuit design?

Soft reverse recovery behavior minimizes electromagnetic interference (EMI) and radio frequency interference (RFI), reducing noise in sensitive switching circuits.

What is the maximum non-repetitive avalanche energy rating?

The avalanche energy rating is 0.8 mJ for non-repetitive operation at a junction temperature of 25°C, with IAS = 2.5 A and L = 180 µH.

DSEC30-02ADSEC30-02A
$1.73
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