Single Bipolar Transistors DSS5140V-7 product image

DSS5140V-7

$0.31
  • Description:TRANS PNP 40V 1A SOT-563
  • Series:-

SKU:3e02bf810b01 Category: Brand:

  
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DSS5140V-7 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS PNP 40V 1A SOT-563. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for DSS5140V-7

  • Description:TRANS PNP 40V 1A SOT-563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:310mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 100mA, 5V
  • Power - Max:600 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for DSS5140V-7

DSS5140V-7

Single Bipolar Transistors Overview

The DSS5140V-7 is a low VCE(SAT) PNP surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an SOT-563 case. The device supports a maximum collector current of -1 A and withstands collector-emitter voltages up to -40 V. Key electrical parameters include a DC current gain (hFE) ranging from 160 to 800, a collector-emitter saturation voltage of -310 mV at -1 A, and a transition frequency (fT) of 150 MHz. Power dissipation reaches 600 mW with a thermal resistance of 208 °C/W.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar die construction for robust performance
  • Low collector-emitter saturation voltage design
  • Ultra-small surface mount package suitable for automated assembly

Single Bipolar Transistors Applications

  • General-purpose switching applications
  • Complementary circuits paired with NPN types like the DSS4140V
  • Automated assembly processes requiring small form factors

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and lead-free status against current regulatory requirements. Ensure storage conditions adhere to moisture sensitivity level 1 standards per J-STD-020D. Validate ordering suffixes match specific packaging configurations such as tape and reel quantities.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current gain and low saturation voltage in compact layouts. Consider the complementary NPN variant for push-pull configurations. Evaluate thermal management needs given the 208 °C/W junction-to-ambient resistance. Verify that operating temperatures remain within the specified -55°C to +150°C range for reliability.

Single Bipolar Transistors Part Context

This part belongs to the DSS51 series of low VCE(SAT) transistors designed for surface mount technology. It serves as the PNP counterpart to the DSS4140V NPN transistor, enabling matched pairs for efficient circuit design. The SOT-563 package provides a balance between power handling and space constraints in modern electronics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the DSS4140V as the complementary NPN type available for matching purposes. No other direct replacement part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The continuous collector current is rated at -1 A, with a peak pulse collector current capability of -2 A.

Is the device compliant with environmental regulations?

Yes, the DSS5140V is lead-free and RoHS compliant, utilizing a 'Green' molding compound without purposefully added lead.

What is the typical DC current gain at full load?

At a collector current of -1 A and VCE of -5 V, the minimum DC current gain (hFE) is 160, with a maximum of 800.

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