Diode Arrays DZ800S17K3HOSA1 product image

DZ800S17K3HOSA1

$126.21
  • Description:DIODE MODULE GP 1700V AG62MM-2
  • Series:-

SKU:1bb8638d33ef Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

DZ800S17K3HOSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 1700V AG62MM-2. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DZ800S17K3HOSA1

  • Description:DIODE MODULE GP 1700V AG62MM-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Diode Configuration:-
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:2.2 V @ 800 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-40°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-62MM-2
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DZ800S17K3HOSA1

DZ800S17K3HOSA1

Diode Arrays Overview

The DZ800S17K3HOSA1 is a 62mm C-series IGBT module featuring an Emitter Controlled diode. It provides a repetitive peak reverse voltage of 1700 V and a continuous DC forward current of 800 A. The module incorporates basic insulation using Al2O3, achieving an isolation test voltage of 4.0 kV RMS. Key electrical parameters include a maximum forward voltage of 2.20 V at 800 A and 125°C, with a junction-to-case thermal resistance of 0.058 K/W per diode. The unit weighs 340 g and operates within a temperature range of -40°C to 125°C.

Diode Arrays Feature Summary

  • Incorporates Emitter Controlled diode technology for optimized switching performance
  • Features robust basic insulation utilizing Al2O3 material for high reliability
  • Designed with a compact 62mm C-series form factor for efficient integration

Diode Arrays Applications

  • Industrial motor drives
  • Medium voltage power supplies
  • Uninterruptible power systems (UPS)

Diode Arrays Procurement Notes

Verify the specific HOSA1 ordering suffix against official Infineon documentation to confirm compliance with RoHS directives and halogen-free requirements. Ensure that the procurement channel is an authorized distributor to guarantee product authenticity and traceability. Cross-reference the datasheet revision number to validate that all technical specifications align with the latest manufacturing standards before finalizing orders.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling capabilities within a constrained footprint. The low stray inductance design supports high-frequency switching operations while minimizing electromagnetic interference. Evaluate the thermal management solution based on the specified junction-to-case resistance to ensure stable operation under continuous load conditions without exceeding maximum temperature limits.

Diode Arrays Part Context

This module belongs to Infineon's 62mm C-series lineup, engineered for industrial power conversion. It utilizes trench field-stop technology combined with emitter-controlled diodes to enhance efficiency. The series is designed to meet rigorous industrial standards, offering a balance between high power density and long-term operational stability in demanding environments.

Diode Arrays Replacement Considerations

DZ800S17K3

DZ800S17K3HOSA1DZ800S17K3HOSA1
$126.21
Buy Now

Recent News