FDD8878

Single FETs, MOSFETs Overview

The FDD8878 is a single N-channel PowerTrench MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It features a 30V drain-source voltage rating and supports a continuous drain current of 40A at 25°C. The device exhibits a maximum on-resistance of 15 milliohms at 10V gate drive. It operates within a temperature range of -55°C to +175°C junction temperature. The component utilizes a DPAK-3 (TO-252-3) surface-mount package with a power dissipation capacity of 40W.

Single FETs, MOSFETs Feature Summary

• Utilizes PowerTrench technology for enhanced switching performance and low conduction losses.
• Designed for high-efficiency synchronous rectification applications in power conversion systems.
• Features robust avalanche energy ratings suitable for inductive load switching environments.

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• Power management circuits for portable devices
• High-side and low-side switching in motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer origin as Fairchild Semiconductor or onsemi, given the corporate acquisition history. Confirm RoHS compliance status through official datasheets. Check for obsolescence notices as distribution channels may vary. Ensure the package type matches the required DPAK-3 footprint for PCB integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance at 30V ratings. Consider the thermal performance limits defined by the 40W dissipation rating. Evaluate gate charge specifications for driving requirements. Compare against alternative packages if higher current density is needed.

Single FETs, MOSFETs Part Context

This part belongs to the PowerTrench MOSFET family known for optimized trench gate technology. Fairchild Semiconductor developed these components before being acquired by onsemi. The product line focuses on improving power density and efficiency in modern electronic designs.

Single FETs, MOSFETs Replacement Considerations

FDU8878: Through-hole IPAK version with identical electrical characteristics. FDS8878: SOIC-8 package variant with lower current handling capabilities. Verify pinout compatibility and thermal resistance differences when substituting.