Single FETs, MOSFETs FDFS2P753AZ product image

FDFS2P753AZ

$0.51
  • Description:MOSFET P-CH 30V 3A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:52d381d2a9c9 Category: Brand:

  
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FDFS2P753AZ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 30V 3A 8SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDFS2P753AZ

  • Description:MOSFET P-CH 30V 3A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:115mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 15 V
  • FET Feature:Schottky Diode (Isolated)
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOIC
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for FDFS2P753AZ

FDFS2P753AZ

Single FETs, MOSFETs Overview

The FDFS2P753AZ is an integrated P-Channel PowerTrench MOSFET and Schottky diode in an SO-8 package. It features a maximum drain-source voltage of -30V and continuous drain current of -3A. The static drain-to-source on-resistance is 115mΩ at VGS=-10V, ID=-3.0A, and 180mΩ at VGS=-4.5V, ID=-1.5A. The Schottky diode has a forward voltage below 0.45V at 2A and below 0.28V at 100mA. Total gate charge is 11.0nC at VGS=0V to -10V.

Single FETs, MOSFETs Feature Summary

  • Combines a low on-state resistance P-Channel MOSFET with an electrically independent Schottky diode in a single surface mount package for design flexibility.
  • Optimized gate charge enables fast switching performance suitable for high-frequency DC/DC conversion applications.

Single FETs, MOSFETs Applications

  • DC-DC Conversion

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi. Confirm the specific suffix 'AZ' matches the required RoHS compliant version. Ensure the SO-8 package type aligns with the target PCB footprint. Validate that the thermal characteristics meet the system's heat dissipation requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a compact solution integrating a synchronous rectifier MOSFET and a freewheeling diode is required. The independent pinout allows for optimized layout to minimize parasitic inductance. Consider the -30V rating and -3A current capability against the specific load requirements of the power stage.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family, known for low on-resistance and optimized gate charge. It integrates discrete components into a single surface mount package to simplify circuit design and reduce board space. The integration targets efficiency improvements in power conversion topologies.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists FDFS2P753Z as a related part number. Verify if the 'AZ' suffix specifically denotes RoHS compliance compared to other variants. Check pinout compatibility and electrical parameters before substituting with similar integrated MOSFET-diode packages.

Single FETs, MOSFETs FAQ

Is the Schottky diode electrically connected to the MOSFET?

No, the Schottky diode and MOSFET are electrically independent within the package, providing design flexibility for the circuit topology.

What is the maximum repetitive peak reverse voltage for the Schottky diode?

The Schottky diode has a maximum repetitive peak reverse voltage (VRRM) of 30V.

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