Single FETs, MOSFETs FDMA430NZ product image

FDMA430NZ

$0.90
  • Description:MOSFET N-CH 30V 5A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:fcc33ef59ff5 Category: Brand:

  
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FDMA430NZ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 5A 6MICROFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDMA430NZ

  • Description:MOSFET N-CH 30V 5A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:40mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2.4W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-MicroFET (2x2)
  • Package / Case:6-WDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for FDMA430NZ

FDMA430NZ

Single FETs, MOSFETs Overview

The FDMA430NZ is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It utilizes advanced trench MOSFET technology to deliver low on-resistance and high switching efficiency within a compact SOT-363 surface-mount package. The device is designed for use in synchronous rectification applications, offering improved thermal performance and reduced power losses compared to standard discrete solutions.

Single FETs, MOSFETs Feature Summary

  • Dual N-channel configuration integrated into a single compact package
  • Advanced trench MOSFET technology for enhanced switching performance
  • Low on-resistance characteristics optimized for synchronous rectification
  • Designed for high-efficiency DC-DC converter topologies

Single FETs, MOSFETs Applications

  • Synchronous rectification in point-of-load (POL) converters
  • High-frequency DC-DC step-down regulator circuits
  • Power management modules for portable electronic devices

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the official onsemi datasheet before procurement. Confirm that the component meets the required RoHS compliance standards for your target market. Ensure the selected package variant matches the PCB footprint design specifications exactly to avoid assembly issues.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints require dual transistors in a minimal footprint. Evaluate the total power dissipation capabilities against the thermal resistance of the PCB layout. Compare the gate charge parameters with the driving circuit's output current capability to ensure adequate switching speeds without excessive drive losses.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's portfolio of small-signal and logic level MOSFETs designed for consumer and industrial electronics. It serves as a solution for applications requiring multiple switches in a confined area, such as multi-phase regulators or bridge drivers where board real estate is limited.

Single FETs, MOSFETs Replacement Considerations

Consult the official onsemi cross-reference guide for verified substitutes. Ensure any replacement maintains identical pinout compatibility and voltage ratings. Verify that alternative components meet the same thermal and electrical performance criteria defined in the original datasheet.

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