FDMS10C4D2N

$2.58

Description：MOSFET N-CH 100V 17A 8PQFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7f7163e86b8b Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDMS10C4D2N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 17A 8PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDMS10C4D2N

Description：MOSFET N-CH 100V 17A 8PQFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4.2mOhm @ 44A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：65 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4500 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PQFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for FDMS10C4D2N

FDMS10C4D2N

Single FETs, MOSFETs Overview

The FDMS10C4D2N is an N-Channel Shielded Gate PowerTrench MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 100V and a continuous drain current of 124A. The device exhibits a low on-resistance (RDS(on)) of 4.2mΩ at VGS=10V. Packaged in an 8-PQFN (5x6mm) surface-mount case, it utilizes silicon technology for high-efficiency power switching applications.

Single FETs, MOSFETs Feature Summary

Shielded Gate Technology for optimized performance
Ultra-low on-resistance for reduced conduction losses
Surface-mount PQFN package design

Single FETs, MOSFETs Applications

DC-AC energy inversion systems
High-efficiency power switching circuits
Industrial motor control drives

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix to ensure compatibility with your design requirements. Confirm that the 8-PQFN footprint matches your PCB layout constraints. Check for RoHS compliance status if required by your manufacturing standards. Ensure thermal management solutions are adequate for the 125W dissipation rating under your specific operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-Channel MOSFET with high current capability is required. The 4.2mΩ RDS(on) makes it suitable for low-loss applications. Consider the 8-PQFN package size for space-constrained designs. Evaluate thermal resistance parameters against your heat sink or board copper area capabilities to ensure safe operating temperatures.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's PowerTrench family of MOSFETs, designed for efficient power management. It is distinct from optocouplers listed in general category searches. The device is a single-element, unipolar silicon FET intended for robust industrial and consumer power electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 100V N-Channel MOSFETs in the 8-PQFN package. Verify pinout compatibility and thermal characteristics before substitution. Ensure replacement parts meet the same 124A current and 4.2mΩ resistance specifications.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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