FDMS86180

Single FETs, MOSFETs Overview

The FDMS86180 is an N-Channel MV MOSFET manufactured by onsemi using the PowerTrench process with Shielded Gate technology. It features a 100V drain-source voltage rating and a continuous drain current of 151A at case temperature. The device exhibits a maximum on-resistance of 3.2 milliohms at 10V gate drive. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation capacity of 138W. The component is housed in a Power56 package, also identified as 8-PowerTDFN.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced PowerTrench process incorporating Shielded Gate technology for optimized performance.
• Designed to minimize voltage overshoot and reduce voltage ringing.
• Engineered to lower electromagnetic interference (EMI) in switching applications.

Single FETs, MOSFETs Applications

• Power systems requiring 100V-rated MOSFETs
• Cordless power tools
• Applications demanding low EMI and reduced voltage ringing

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm packaging type, such as tape-and-reel or cut tape, as these affect handling but not electrical function. Confirm RoHS compliance status through official documentation before integration. Ensure thermal management design accounts for the 138W power dissipation rating at case temperature to maintain reliability within the specified operating temperature range.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-Channel MOSFET with high current capability and low on-resistance is required. The Power56 package supports surface mount installation. Consider the 3.2 milliohm on-resistance for efficiency calculations. Verify that the 151A continuous drain current rating aligns with the thermal constraints of the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the FDMS86 series from onsemi, utilizing the PowerTrench trademark technology. It is categorized under single FETs and MOSFETs. The device is designed for medium-voltage applications where efficient switching and robust performance are critical. It represents a solution for modern power management needs in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 100V N-Channel MOSFETs in the Power56 package if pin compatibility is required. Verify that substitute components meet or exceed the 3.2 milliohm on-resistance and 151A current ratings. Check datasheets for equivalent thermal characteristics and gate charge specifications to ensure circuit stability.