FDN358P

Single FETs, MOSFETs Overview

The FDN358P is a single-channel P-Channel enhancement mode MOSFET from onsemi's PowerTrench series. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 1.5A. The device offers a maximum on-resistance of 125 mΩ at Vgs = -4.5V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 500mW. The component utilizes an SSOT-3 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Utilizes PowerTrench technology for optimized low on-resistance performance in small packages.
• Designed for efficient switching applications with fast rise and fall times.
• Enhanced mode operation allows for direct logic-level control compatibility.

Single FETs, MOSFETs Applications

• Low-side load switching
• Power management circuits
• Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the supplier's certificate of conformity. Cross-reference the part number with the latest datasheet revision to validate electrical parameters before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring compact P-Channel switching solutions with moderate current handling capabilities. Ensure the thermal design accommodates the 500mW power dissipation limit under expected operating conditions. Verify that the gate drive voltage aligns with the specified threshold and on-resistance characteristics for optimal efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the FDN358P series of small-signal MOSFETs manufactured by onsemi. It is categorized under discrete semiconductors and power modules, specifically within the MOSFET product line. The component is designed for general-purpose switching applications where space constraints and cost-effectiveness are primary design drivers.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible P-Channel MOSFETs with similar voltage and current ratings. Verify pinout compatibility and package dimensions (SSOT-3) when considering alternative manufacturers. Ensure thermal and electrical performance metrics meet or exceed the original specifications.