FDS5170N7

Single FETs, MOSFETs Overview

The FDS5170N7 is a 60V N-Channel PowerTrench MOSFET designed for DC/DC converter efficiency. It features an RDS(ON) of 12 mΩ at VGS=10V and 15 mΩ at VGS=6.0V, with a continuous drain current of 10.6A. The device utilizes high-performance trench technology for low gate charge (51nC typical) and fast switching. It is housed in an FLMP SO-8 package with enhanced thermal performance.

Single FETs, MOSFETs Feature Summary

• Optimized for low-side synchronous rectifier operation to improve overall system efficiency
• High power and current handling capability enabled by advanced trench technology
• Fast switching characteristics combined with low gate charge for reduced losses

Single FETs, MOSFETs Applications

• Synchronous rectifier circuits
• DC/DC converters using conventional or synchronous PWM controllers

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor Corporation, now part of onsemi, when sourcing this component. Confirm that the ordering suffix matches the specific reel size and tape width requirements for your assembly line. Ensure compliance with RoHS standards if applicable to your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and efficient heat dissipation within a standard footprint. Consider the thermal resistance values relative to your board design copper area. Evaluate the gate charge specifications against your controller's drive capabilities to ensure optimal switching speeds.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of MOSFETs, which are engineered for superior performance in power management applications. The FLMP SO-8 package provides industry-standard dimensions while offering improved thermal characteristics compared to traditional packages, facilitating better heat transfer from the junction to the ambient environment.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative N-channel MOSFETs with similar 60V ratings and comparable RDS(ON) values. Verify pin compatibility and package dimensions before substitution. Ensure that any replacement device meets or exceeds the required avalanche energy and continuous current specifications.