FDS7066ASN3

Single FETs, MOSFETs Overview

The FDS7066ASN3 is a single N-channel silicon power MOSFET manufactured by Rochester Electronics. It features an SO-8 (FLMP) surface-mount package with eight terminals. Key electrical specifications include a drain-source breakdown voltage of 30V, a continuous drain current rating of 19A, and a maximum on-resistance of 0.0048 ohms. The device operates in enhancement mode and includes a built-in diode.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration with integrated body diode
• Enhancement mode operation for low-voltage switching applications
• Lead-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

• Low-voltage DC-DC converter circuits
• Power management modules requiring high current density
• General-purpose switching applications within 30V limits

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Rochester Electronics rather than Fairchild Semiconductor, as this entity often distributes surplus or obsolete inventory. Confirm the specific suffix 'ASN3' corresponds to the lead-free FLMP package variant. Ensure the component meets RoHS compliance requirements for your assembly process. Validate the datasheet revision date against your design timeline to confirm parameter stability.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SO-8 footprint is required for 30V systems. The low on-resistance supports efficient power handling at 19A. Verify thermal dissipation capabilities within the plastic epoxy package. Ensure gate drive voltages align with the enhancement mode characteristics. Consider the single-channel architecture for space-constrained designs.

Single FETs, MOSFETs Part Context

This part belongs to the discrete semiconductor category, specifically power field-effect transistors. It utilizes metal-oxide semiconductor technology. The device is classified under small outline packages with rectangular geometry. It serves as a replacement or alternative for legacy Fairchild components in existing designs.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility if substituting with other 30V N-channel MOSFETs in SO-8 packages. Check that replacement devices meet the 19A current and 0.0048 ohm resistance requirements.