FDS8672S

$2.25

Description：MOSFET N-CH 30V 18A 8SOIC
Series：PowerTrench®, SyncFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cbc0029a640f Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDS8672S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 18A 8SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDS8672S

Description：MOSFET N-CH 30V 18A 8SOIC
Series：PowerTrench®, SyncFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2670 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for FDS8672S

FDS8672S

Single FETs, MOSFETs Overview

The FDS8672S is a 30 V N-Channel PowerTrench SyncFET monolithically integrating a MOSFET and Schottky diode in an SOIC-8 package. It features a maximum RDS(on) of 4.8 mΩ at VGS = 10 V, ID = 18 A, and 7.0 mΩ at VGS = 4.5 V, ID = 15 A. The device supports continuous drain current up to 18 A and handles pulsed currents of 80 A. Operating junction temperature ranges from -55°C to +150°C with power dissipation rated at 2.5 W on a 1 in² copper pad.

Single FETs, MOSFETs Feature Summary

Monolithic integration of N-Channel MOSFET and Schottky diode using SyncFET technology
Extremely low RDS(on) enabled by high-performance trench technology
Fast switching characteristics with low gate charge for improved efficiency
Patented combination reduces component count compared to discrete solutions

Single FETs, MOSFETs Applications

Notebook Vcore Low Side Switch
Synchronous Rectifier for DC/DC Converters
Point of Load Low Side Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (Rev. 2, November 2019) matches your design requirements. Confirm that the SOIC-8 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your actual board layout conditions.

Single FETs, MOSFETs Selection Notes

Select this component when minimizing bill of materials is critical due to its integrated Schottky diode. Evaluate the trade-off between the low RDS(on) and the package's thermal limitations. Consider the fast switching speeds for high-frequency applications while managing potential EMI concerns associated with rapid transitions.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's PowerTrench and SyncFET families. It utilizes advanced trench technology to achieve superior performance metrics compared to standard planar MOSFETs. The integration addresses space constraints in portable electronics by combining two components into a single surface-mount package.