FDV303N_NB9U008

$0.09

Description：MOSFET N-CH 25V 680MA SOT-23
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:2e5e9ce44fcd Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDV303N_NB9U008 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 25V 680MA SOT-23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDV303N_NB9U008

Description：MOSFET N-CH 25V 680MA SOT-23
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
Rds On (Max) @ Id, Vgs：450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for FDV303N_NB9U008

FDV303N_NB9U008

Single FETs, MOSFETs Overview

The FDV303N is an N-channel enhancement mode field effect transistor manufactured by onsemi. It features a drain-source voltage of 25 V and a continuous drain current of 0.68 A. The device exhibits a maximum on-resistance of 0.45 Ω at a gate-source voltage of 4.5 V, and 0.6 Ω at 2.7 V. Total gate charge is typically 1.64 nC to 2.3 nC. Operating temperature ranges from -55 °C to +150 °C with a power dissipation of 0.35 W.

Single FETs, MOSFETs Feature Summary

Designed for direct operation in 3V circuits due to very low level gate drive requirements.
Utilizes high cell density DMOS technology to minimize on-state resistance at low gate drive conditions.
Provides excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Single FETs, MOSFETs Applications

Battery circuits using one lithium or three cadmium/NiMH cells
High-efficiency miniature discrete DC/DC conversion
Inverter applications in compact portable electronic devices

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as this component was originally developed by Fairchild Semiconductor before acquisition by onsemi. Confirm the datasheet revision matches the required specifications. Ensure sourcing channels are authorized distributors to prevent counterfeit parts, adhering to the anti-counterfeiting policy regarding traceability and warranty coverage.

Single FETs, MOSFETs Selection Notes

Select this component for portable electronics requiring efficient switching at low gate drive voltages. It serves as an alternative to TN0200T and TN0201T models. Consider the thermal resistance of 357 °C/W when designing heat dissipation strategies for surface mount implementations.

Single FETs, MOSFETs Part Context

This part belongs to the UniFET series of N-Channel MOSFETs. It is housed in a compact industry-standard SOT-23 surface mount package. The device is designed specifically for battery-powered applications where minimizing on-state resistance at low voltages is critical for system efficiency.