Diode Arrays FEP16CT product image

FEP16CT

  • Description:DIODE ARRAY GP 150V 16A TO-220-3
  • Series:-

SKU:75308be38ff1 Category: Brand:

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FEP16CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 150V 16A TO-220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FEP16CT

  • Description:DIODE ARRAY GP 150V 16A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):16A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 150 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FEP16CT

FEP16CT

Diode Arrays Overview

The FEP16CT is a silicon ultra-fast recovery rectifier manufactured by onsemi. It features a dual common cathode configuration housed in a TO-220AB package. The device supports a maximum repetitive reverse voltage of 600 V and an average forward current of 16 A. Key electrical characteristics include a maximum forward voltage of 1.5 V, a peak non-repetitive surge current capability of 200 A, and a typical reverse recovery time of 50 ns. The component operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

  • Dual common cathode configuration for bridge or push-pull applications
  • Ultra-fast recovery characteristics suitable for high-frequency switching
  • High thermal stability with extended operating temperature range

Diode Arrays Applications

  • High-frequency DC/DC converters
  • Free-wheeling rectification in power supplies
  • Isolated output rectification in flyback topologies

Diode Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm pinout and packaging variations. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure thermal management design accounts for the specified power dissipation limits in the TO-220AB package.

Diode Arrays Selection Notes

Select this component for circuits requiring fast switching speeds and high current handling in a standard through-hole package. Compare reverse recovery time and forward voltage drop against system efficiency requirements. Verify that the 600 V rating provides sufficient margin for transient voltages in the target application.

Diode Arrays Part Context

This part belongs to the FEP series of ultra-fast recovery rectifiers from onsemi. It utilizes silicon technology optimized for high-speed switching applications. The dual common cathode arrangement allows for efficient implementation in full-bridge or half-bridge converter topologies commonly found in industrial power systems.

Diode Arrays Replacement Considerations

FEP16JT

Diode Arrays FAQ

What is the reverse recovery time of the FEP16CT?

The typical reverse recovery time (trr) is 50 ns.

What is the maximum surge current rating?

The device can withstand a peak non-repetitive forward surge current of 200 A.

What is the package type?

The FEP16CT is available in a TO-220AB package.

FEP16CTFEP16CT

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