FFPF60SA60DSTU

Diode Arrays Overview

The FFPF60SA60DSTU is a STEALTH dual series diode manufactured by onsemi. It features an 8 A average rectified forward current and a 600 V peak repetitive reverse voltage rating. The device utilizes silicon nitride passivated ion-implanted epitaxial planar construction for high reliability. Key electrical characteristics include a maximum forward voltage of 2.4 V at 25°C case temperature and a typical reverse recovery time of 39 ns under specific test conditions. It is rated for avalanche energy and operates within a junction temperature range of -65 to +175°C.

Diode Arrays Feature Summary

• Soft recovery characteristics with hyperfast switching performance
• Low stored charge to minimize ringing and electrical noise
• Avalanche energy rated for robust operation
• Silicon nitride passivated ion-implanted epitaxial planar construction

Diode Arrays Applications

• Hard switched PFC boost diode
• SMPS freewheeling diode
• Motor drive freewheeling diode
• Snubber diode applications
• UPS freewheeling diode

Diode Arrays Procurement Notes

Verify the exact part number suffix against official documentation, as ordering suffixes may indicate variations in packaging or tape-and-reel configurations that do not alter the internal semiconductor function. Confirm RoHS compliance status through the manufacturer's latest environmental declarations. Ensure the component meets all applicable safety standards required for the intended end-use application before procurement.

Diode Arrays Selection Notes

Select this component for circuits requiring low reverse recovery charge and soft recovery behavior to reduce electromagnetic interference. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the avalanche energy rating when designing for inductive load switching scenarios. Validate forward voltage drop characteristics against system efficiency targets at the expected operating current levels.

Diode Arrays Part Context

This device belongs to the STEALTH family of power diodes from onsemi, designed specifically for high-frequency switching applications. The dual series configuration allows for efficient handling of higher voltage stresses in bridge or boost topologies. It represents a silicon-based solution optimized for balancing switching speed with conduction losses in modern power electronics designs.

Diode Arrays Replacement Considerations

FFPF60SA60DS

Diode Arrays FAQ

What is the maximum reverse recovery time specified for this diode?

The maximum reverse recovery time is 30 ns when tested at IF = 8 A, diF/dt = 100 A/μs, and VR = 30 V.

Is this component rated for avalanche energy?

Yes, the FFPF60SA60DSTU is avalanche energy rated, capable of handling 20 mJ under test conditions of 1 A and 40 mH.

What package type does this part use?

The component is housed in a TO-220F package.