FFSH10120ADN-F155

Diode Arrays Overview

The FFSH10120ADN-F155 is a silicon carbide Schottky barrier diode manufactured by onsemi. It features a dual anode common cathode configuration housed in a TO-247-3 through-hole package. The device supports a maximum repetitive reverse voltage of 1200 V and conducts a continuous forward current of 10 A per diode. Key electrical parameters include a forward voltage of 1.45 V at 10 A, a peak non-repetitive surge current of 42 A, and a reverse leakage current of 200 µA at 1200 V. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 83 W.

Diode Arrays Feature Summary

• Utilizes silicon carbide (SiC) technology for high-temperature stability and low switching losses.
• Features a dual anode common cathode configuration suitable for bridge rectifier applications.
• Designed for robust performance with a wide operating junction temperature range up to 175°C.

Diode Arrays Applications

• High-frequency DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Solar inverters

Diode Arrays Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm the specific suffix F155 matches design requirements as it denotes tube packaging. Check for end-of-life status or obsolescence notices from onsemi before finalizing procurement plans. Ensure thermal management solutions align with the 83 W power dissipation rating under expected load conditions.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high voltage blocking capability and efficient rectification in harsh environments. The TO-247-3 package facilitates effective heat sinking for high-power density designs. Consider the 1.45 V forward voltage drop for efficiency calculations in low-voltage output stages. Evaluate the 42 A surge current rating against potential inrush currents in the target application to ensure adequate safety margins.

Diode Arrays Part Context

This part belongs to onsemi's EliteSiC series of silicon carbide diodes, engineered for high-performance power conversion. The FFSH10120ADN variant specifically targets applications demanding superior thermal conductivity and reliability compared to traditional silicon devices. It complements other components in onsemi's SiC portfolio designed for next-generation energy-efficient systems.

Diode Arrays Replacement Considerations

Consult official substitution guides for equivalent parts with matching voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before replacing the component in existing designs.