FFSH20120ADN-F155

Diode Arrays Overview

The FFSH20120ADN-F155 is a Silicon Carbide Schottky diode manufactured by onsemi, housed in a TO-247-3 through-hole package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 1200 V and a continuous forward current of 10 A per diode. The device exhibits a typical forward voltage of 1.75 V at 10 A and a maximum reverse leakage current of 200 µA at 1200 V. Operating within a junction temperature range of -55°C to +175°C, it supports fast recovery characteristics suitable for high-frequency power conversion applications.

Diode Arrays Feature Summary

• Utilizes silicon carbide (SiC) technology for superior thermal performance and efficiency compared to traditional silicon devices.
• Features a dual anode common cathode configuration to facilitate bridge rectifier or synchronous rectification topologies.
• Designed for high-temperature operation with a maximum junction temperature rating of +175°C.

Diode Arrays Applications

• High-efficiency DC/DC converters
• Solar micro-inverters
• Uninterruptible Power Supplies (UPS)
• Battery chargers

Diode Arrays Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified suppliers. Confirm RoHS compliance status via official datasheets or material declarations before integration. Ensure storage conditions adhere to moisture sensitivity guidelines despite the component's classification. Validate that the specific lot code matches current production standards to avoid obsolete inventory risks.

Diode Arrays Selection Notes

Select this component for designs requiring low reverse recovery charge and high thermal stability. The TO-247-3 package offers robust mechanical mounting and efficient heat dissipation for medium-power applications. Consider the 1200V rating for systems operating near or above standard grid voltages. Evaluate thermal resistance requirements against the system's cooling capabilities to maintain junction temperatures within safe limits during peak loads.

Diode Arrays Part Context

This part belongs to onsemi's FFSH series of silicon carbide Schottky barrier diodes. The series is engineered for high-voltage, high-temperature environments where conventional silicon diodes face efficiency limitations. The FFSH20120 variant specifically targets applications demanding reduced switching losses and improved reliability in power electronic circuits.

Diode Arrays Replacement Considerations

Direct pin-compatible substitutes may include other 1200V SiC Schottky diodes in TO-247-3 packages from various manufacturers, provided electrical parameters such as Vf and Ir are comparable. Verify that any alternative maintains the same dual anode common cathode configuration and thermal characteristics to ensure seamless integration without circuit redesign.