Single Bipolar Transistors FJP5027R product image

FJP5027R

$0.27
  • Description:TRANS NPN 800V 3A TO-220-3
  • Series:-

SKU:6d40f04a9d90 Category: Brand:

  
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FJP5027R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 800V 3A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FJP5027R

  • Description:TRANS NPN 800V 3A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):800 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 300mA, 1.5A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 200mA, 5V
  • Power - Max:50 W
  • Frequency - Transition:15MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for FJP5027R

FJP5027R

Single Bipolar Transistors Overview

The FJP5027R is an NPN silicon power transistor from the onsemi FJP series, designed for high-voltage applications. It features a collector-emitter voltage (VCEO) of 800 V and a collector-base voltage (VCBO) of 1.1 kV. The device supports a maximum continuous DC collector current of 3 A and a collector current of 1.5 A in specific configurations. It has a power dissipation rating of 50 W and operates up to a maximum junction temperature of +150°C. Key electrical parameters include a saturation voltage of 2 V, a gain-bandwidth product (fT) of 15 MHz, and a minimum DC current gain (hFE) of 20. The component is housed in a TO-220 package.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 800 V collector-emitter breakdown
  • Robust thermal performance with 50 W power dissipation
  • Designed for high reliability in demanding environments

Single Bipolar Transistors Applications

  • High voltage switching circuits
  • Flyback transformer drivers
  • Inverter circuits

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against official datasheets to confirm pinout and packaging variations. Ensure the procurement source provides valid RoHS compliance documentation. Cross-reference the manufacturer part number with the distributor catalog to avoid confusion with similar high-voltage BJT models. Confirm lead-free status if required by assembly specifications.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities above 600 V. Consider the 3 A current limit and 50 W thermal dissipation for heat sink requirements. Evaluate the hFE range for base drive circuit design. Compare fT specifications against switching frequency requirements to ensure adequate bandwidth for the intended application speed.

Single Bipolar Transistors Part Context

This transistor belongs to the FJP series, which focuses on high-voltage and high-reliability silicon bipolar junction transistors. The series is commonly used in industrial and consumer electronics where robust performance under high stress conditions is necessary. The FJP5027 variant specifically targets applications needing high voltage isolation with moderate current handling.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: FJPF5027OTU, FJPF5027RTU.

FJP5027RFJP5027R
$0.27
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