FMMT416TD

$9.91

Description：TRANS NPN 100V 0.5A SOT-23-3
Series：-

SKU:a6de32bfe47c Category: Single Bipolar Transistors Brand: Diodes Incorporated

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Product introduction

FMMT416TD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 100V 0.5A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FMMT416TD

Description：TRANS NPN 100V 0.5A SOT-23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN - Avalanche Mode
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：100mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 10V
Power - Max：500 mW
Frequency - Transition：40MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for FMMT416TD

FMMT416TD

Single Bipolar Transistors Overview

The FMMT416TD is an NPN silicon planar bipolar avalanche transistor in a SOT23 package. It features a collector-base breakdown voltage exceeding 315V and a collector-emitter breakdown voltage greater than 100V. The device delivers a peak avalanche current of 60A with a 20ns pulse width, while maintaining a continuous collector current rating of 500mA. Designed for high-speed switching, it exhibits low collector-emitter inductance of 2.5nH and a transition frequency of 40MHz.

Single Bipolar Transistors Feature Summary

Specifically designed for avalanche mode operation to generate high-current pulses with fast edges
Low inductance packaging combined with tight process control for superior transient performance
Totally lead-free and fully RoHS compliant construction

Single Bipolar Transistors Applications

Laser diode drivers for ranging and measurement (LIDAR)
Radar systems
Fast edge switch generators
High-speed pulse generators

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the reel size and tape width configuration required for your assembly line. Confirm that the component meets all applicable automotive quality standards if intended for regulated environments. Ensure the design accounts for the device's thermal characteristics under pulsed operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when high-voltage avalanche capability is required within a compact surface-mount footprint. Evaluate the 60A peak current limit against the specific pulse width requirements of the target application. Consider the 2.5nH internal inductance for high-frequency signal integrity in fast-switching circuits.

Single Bipolar Transistors Part Context

This part belongs to the FMMT series of NPN avalanche transistors manufactured by Diodes Incorporated. These devices are engineered to operate reliably in the avalanche region, distinguishing them from standard bipolar junction transistors. The series utilizes silicon planar technology optimized for generating precise, high-amplitude electrical pulses.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states that the FMMT416 is not recommended for new designs. Contact the manufacturer or local representatives for guidance on suitable replacement components or updated product alternatives.