Diode Arrays FMU-14S product image

FMU-14S

$1.10
  • Description:DIODE ARRAY GP 400V 5A TO-220F
  • Series:-

SKU:308b5c57c9c8 Category: Brand:

  
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FMU-14S is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is DIODE ARRAY GP 400V 5A TO-220F. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FMU-14S

  • Description:DIODE ARRAY GP 400V 5A TO-220F
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 2.5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):400 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 400 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FMU-14S

FMU-14S

Diode Arrays Overview

The FMU-14S is a silicon rectifier diode designed for high-frequency rectification applications. It features a resin-molded structure with an isolated case connection. Key electrical ratings include a peak reverse voltage of 400 V and a maximum average forward current of 5.0 A, subject to derating curves based on case temperature. The device supports a transient peak reverse voltage of 450 V and a peak surge forward current of 30 A. Electrical characteristics specify a maximum forward voltage drop of 1.5 V at 2.5 A and a reverse recovery time ranging from 180 ns to 400 ns depending on test conditions. Thermal resistance between the junction and case is limited to 4.0 °C/W.

Diode Arrays Feature Summary

  • Resin molded construction providing isolation between the component body and mounting surfaces.

Diode Arrays Applications

  • High frequency rectification circuits

Diode Arrays Procurement Notes

Verify the specific suffix designation (e.g., R) against official documentation to confirm exact marking and package details. Confirm compliance with UL94V-0 flammability standards if required by the design specification. Ensure thermal management strategies account for the specified junction-to-case thermal resistance and derating requirements to maintain operation within the -40°C to +150°C junction temperature range.

Diode Arrays Selection Notes

Select this component for designs requiring fast recovery characteristics in high-frequency environments. Evaluate the thermal performance using the provided derating curves to ensure the average forward current remains within limits at expected operating case temperatures. Consider the 400 V peak reverse voltage rating relative to the circuit's maximum reverse voltage stress. Note that the manufacturer indicates this part is not recommended for new designs.

Diode Arrays Part Context

The FMU-14S belongs to Sanken Electric's lineup of silicon rectifier diodes. These components are engineered for robust performance in power conversion systems where rapid switching and high reliability are necessary. The product line typically includes variants optimized for different voltage and current thresholds while maintaining consistent physical dimensions and mounting characteristics.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Diode Arrays FAQ

What is the maximum reverse recovery time specified for the FMU-14S?

The maximum reverse recovery time is 400 ns when tested at IF=IRP=100mA with a 90% recovery point at Tj=25°C. Under conditions of IF=100mA and IRP=200mA at a 75% recovery point, the maximum time is 180 ns.

How does the average forward current capability change with case temperature?

The average forward current must be reduced as the case temperature increases. The datasheet provides a derating curve showing the relationship between case temperature and allowable average forward current to keep the junction temperature within the +150°C limit.

What is the thermal resistance value between the junction and the case?

The maximum thermal resistance between the junction and the case (Rth(j-c)) is 4.0 °C/W.

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