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FQA8N90C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 8A TO3P. Review the specifications below when checking this part for your BOM.
The FQA8N90C is a 900V N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features an 8.0 A continuous drain current at 25°C case temperature and a maximum on-resistance of 1.9Ω at VGS = 10 V. The device includes avalanche testing, low gate charge (typical 35 nC), and low reverse transfer capacitance (typical 12 pF). It operates within a junction temperature range of -55 to +150°C and utilizes a TO-3P package.
Verify the manufacturer origin, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific unit matches the original datasheet specifications regarding voltage ratings and thermal characteristics. Ensure the TO-3P package dimensions align with your board layout requirements.
Select this component for applications requiring high voltage blocking capabilities up to 900V. Consider the thermal resistance parameters when designing heat dissipation solutions. Evaluate the gate charge and capacitance values against your switching frequency requirements to ensure optimal drive circuit compatibility.
This part belongs to the QFET series of power MOSFETs designed for robust performance in demanding power electronics environments. The TO-3P through-hole package provides mechanical stability and efficient heat transfer to external heatsinks, suitable for industrial and commercial power conversion systems.
Check for equivalents such as the FQA9N90C or FQA11N90C from the same family, noting differences in current ratings and on-resistance. Verify pinout compatibility and thermal management requirements before substituting.
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