FQA9N90C-F109

Single FETs, MOSFETs Overview

The onsemi FQA9N90C-F109 is an N-channel enhancement mode power MOSFET from the QFET series, manufactured using proprietary planar stripe and DMOS technology. It features a 900V drain-source voltage rating and a continuous drain current of 6A at 25°C case temperature. The device offers a maximum on-resistance of 2.3Ω at Vgs=10V and Id=3A. Key electrical characteristics include a typical gate charge of 30nC and a reverse transfer capacitance (Crss) of 23pF. It is housed in a TO-3PN package with through-hole mounting, supporting a junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes onsemi's proprietary planar stripe and DMOS technology for optimized performance.
• Provides high breakdown voltage capability suitable for demanding power applications.
• Features low gate charge and reverse transfer capacitance to enhance switching efficiency.
• Includes 100% avalanche testing to ensure reliability under transient energy stress.

Single FETs, MOSFETs Applications

• Switching Mode Power Supplies (SMPS)
• Active Power Factor Correction (PFC) circuits
• Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '-F109' against the manufacturer datasheet to confirm packaging details, as ordering suffixes may indicate variations in tape-and-reel specifications or environmental compliance status. Ensure the component meets RoHS requirements if applicable to your design constraints. Cross-reference the part number with official onsemi documentation to validate availability and lead times before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage isolation and robust switching performance in through-hole applications. The TO-3PN package facilitates effective heat dissipation for moderate power levels. Consider the 2.3Ω on-resistance when calculating conduction losses at the target operating current. Verify that the gate drive circuitry can support the required voltage levels to fully enhance the channel without exceeding the ±30V gate-source limit.

Single FETs, MOSFETs Part Context

This device belongs to the QFET family of N-channel power MOSFETs from onsemi. These components are engineered for high-voltage applications, leveraging advanced DMOS processes to balance low on-resistance with fast switching speeds. The QFET series is widely used in industrial and consumer power electronics where reliability and thermal performance are critical.

Single FETs, MOSFETs Replacement Considerations

Compatible substitutes within the same voltage and current class include the FQA11N90C and FQAF11N90C. When replacing, verify that the alternative part's on-resistance and thermal resistance meet the original design's power dissipation requirements. Ensure the pinout configuration matches the TO-3PN footprint to avoid PCB redesign.