Single FETs, MOSFETs FQD2P40TF product image

FQD2P40TF

  • Description:MOSFET P-CH 400V 1.56A DPAK
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:01301377fe5c Category: Brand:

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FQD2P40TF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 400V 1.56A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQD2P40TF

  • Description:MOSFET P-CH 400V 1.56A DPAK
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):400 V
  • Current - Continuous Drain (Id) @ 25°C:1.56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.5Ohm @ 780mA, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 38W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FQD2P40TF

FQD2P40TF

Single FETs, MOSFETs Overview

The FQD2P40TF is a P-Channel enhancement mode power MOSFET from the QFET series, manufactured by onsemi. It utilizes planar stripe DMOS technology to minimize on-state resistance and enhance switching performance. The device features a drain-source voltage of 400 V and a continuous drain current of 1.56 A at 25°C. Key electrical parameters include an on-resistance of 6.5 Ω at VGS = -10 V, typical gate charge of 10 nC, and typical reverse transfer capacitance of 6.5 pF. It is housed in a DPAK-3 (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Planar stripe DMOS technology for minimized on-state resistance
  • Superior switching performance with low gate charge
  • High energy pulse withstand capability in avalanche modes
  • Improved dv/dt capability

Single FETs, MOSFETs Applications

  • Electronic lamp ballasts
  • Complementary half bridge topologies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to potential legacy status. Confirm RoHS compliance and specific tape-and-reel packaging requirements against the official datasheet revision. Ensure storage conditions meet moisture sensitivity level standards prior to assembly.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage P-channel applications requiring robust avalanche ruggedness. Compare on-resistance and gate charge metrics against alternative QFET variants to optimize thermal management and drive efficiency. Validate package compatibility with existing PCB footprints.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of P-Channel MOSFETs designed for general-purpose power switching. It shares architectural similarities with other Fairchild/ON Semiconductor devices like the FQD2P40, leveraging proprietary planar technology for reliability in commutation modes.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include the FQD2P40 or FQD2P40TM. Verify pinout compatibility and electrical parameter equivalence before substitution.

FQD2P40TFFQD2P40TF

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