FQPF9N90C

Description：MOSFET N-CH 900V 8A TO220F
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:0a3a092ae38a Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQPF9N90C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 8A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF9N90C

Description：MOSFET N-CH 900V 8A TO220F
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.4Ohm @ 4A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2730 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：68W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF9N90C

FQPF9N90C

Single FETs, MOSFETs Overview

The FQPF9N90C is an N-channel enhancement mode power MOSFET manufactured by onsemi using planar stripe and DMOS technology. It features a drain-source voltage of 900 V, continuous drain current of 8.0 A at 25°C case temperature, and maximum on-resistance of 1.4 Ω at VGS = 10 V and ID = 4 A. The device operates within a junction temperature range of -55 to +175 °C, supports single pulsed avalanche energy of 900 mJ, and utilizes a TO-220 Fullpack (TO-220F-3SG) package.

Single FETs, MOSFETs Feature Summary

Advanced planar stripe and DMOS technology tailored for reduced on-state resistance and superior switching performance
High avalanche energy strength with 100% avalanche testing verification
Low gate charge and reverse transfer capacitance characteristics

Single FETs, MOSFETs Applications

Switched mode power supplies
Active power factor correction (PFC)
Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm RoHS compliance status and material composition declarations prior to integration. Ensure thermal management design aligns with the specified junction-to-case thermal resistance values for the selected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability and low conduction losses. Evaluate thermal constraints based on the specified junction-to-case resistance and derating curves. Verify that the required gate drive voltage meets the threshold specifications for optimal on-resistance performance in the target circuit topology.

Single FETs, MOSFETs Part Context

This device belongs to the QFET/C0041 series of N-channel enhancement mode power MOSFETs from onsemi. It is part of a family designed for high-voltage switching applications, utilizing proprietary planar stripe and DMOS technology to achieve low on-state resistance and improved switching efficiency compared to standard MOSFET architectures.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists FQP9N90C and FQPF9N90CT as related devices within the same product line. Verify pinout compatibility and thermal resistance differences when substituting between the standard TO-220 and TO-220 Fullpack variants.