FST100150

Diode Arrays Overview

The GeneSiC Semiconductor FST100150 is a silicon power Schottky diode housed in a TO-249AB package. It features a repetitive peak reverse voltage of 150 V and an average forward current rating of 100 A per package. The device operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 0.88 V at Tj = 100 °C and a thermal resistance from junction to case of 1.10 °C/W per leg.

Diode Arrays Feature Summary

• High surge capability for robust operation under transient conditions
• Electrically isolated to the mounting plate
• Not sensitive to electrostatic discharge

Diode Arrays Applications

• General purpose rectification
• High frequency converters
• Motor drives
• Induction heating and welding

Diode Arrays Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm technical specifications and compliance status. Ensure that the procurement channel provides authentic components with traceable manufacturing records. Cross-reference datasheet parameters such as voltage ratings and thermal characteristics with your system requirements before finalizing orders.

Diode Arrays Selection Notes

Select this component based on its 150 V blocking voltage and 100 A current capacity suitable for high-power applications. Consider the TO-249AB package for efficient heat dissipation and screw-mount installation. Evaluate the low forward voltage drop and fast switching characteristics for efficiency in high-frequency circuits requiring reliable thermal management.

Diode Arrays Part Context

This component belongs to the FST100 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings, specifically ranging from 150 V to 200 V. These devices are designed for high-efficiency rectification in demanding power electronics environments.

Diode Arrays Replacement Considerations

FST100200

Diode Arrays FAQ

What is the maximum instantaneous forward voltage?

The maximum instantaneous forward voltage is 0.88 V when measured at a junction temperature of 100 °C.

Is the device sensitive to electrostatic discharge?

No, the FST100150 is not sensitive to electrostatic discharge.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is 1.10 °C/W per leg.