FST10035

Diode Arrays Overview

The GeneSiC Semiconductor FST10035 is a silicon power Schottky diode housed in a TO-249AB package. It features a repetitive peak reverse voltage of 35 V and an average forward current rating of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 0.70 V at Tj = 100 °C and supports a peak forward surge current of 1000 A for an 8.3 ms half-sine pulse. Thermal resistance from junction to case is 1.0 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge current capability
• Isolated to plate construction
• Not ESD sensitive

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification
• Power supply output stages

Diode Arrays Procurement Notes

Verify the specific part number against official GeneSiC Semiconductor documentation to confirm electrical ratings and physical dimensions. Ensure the TO-249AB package type matches the design requirements. Check for any specific ordering suffixes that may indicate variations in packaging or testing standards. Confirm thermal management specifications align with the intended application environment.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling and low forward voltage drop. The 35 V reverse voltage rating suits low-voltage DC conversion systems. Consider the 1.0 °C/W thermal resistance for heatsinking calculations. The TO-249AB package facilitates press-fit or through-hole mounting options depending on the board design.

Diode Arrays Part Context

This device belongs to the FST100xx series of silicon Schottky rectifiers from GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as 20 V, 30 V, and 40 V, all sharing similar current and thermal characteristics. The FST10035 specifically targets the 35 V blocking requirement within this lineup.

Diode Arrays Replacement Considerations

Direct substitutes include other FST10035 units from GeneSiC Semiconductor. Cross-referencing with equivalent 35 V, 100 A Schottky diodes in TO-249AB packages from other manufacturers requires careful verification of thermal resistance and forward voltage curves.