FST12030

$49.92

Description：DIODE MOD SCHOT 30V 120A TO249AB
Series：-

SKU:e1997984b74a Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

FST12030 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 30V 120A TO249AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FST12030

Description：DIODE MOD SCHOT 30V 120A TO249AB
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：30 V
Current - Average Rectified (Io) (per Diode)：120A (DC)
Voltage - Forward (Vf) (Max) @ If：650 mV @ 120 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：2 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：TO-249AB
Supplier Device Package：TO-249AB
Grade：-
Qualification：-

Diode Arrays datasheet and documents for FST12030

FST12030

Diode Arrays Overview

The GeneSiC Semiconductor FST12030 is a silicon power Schottky diode housed in a TO-249AB package. It features a repetitive peak reverse voltage of 30 V and an average forward current rating of 120 A per package. The device supports a maximum junction temperature of 150 °C and offers a peak forward surge current capability of 1000 A per leg. Electrical characteristics include a maximum instantaneous forward voltage of 0.70 V and a thermal resistance from junction to case of 0.80 °C/W per leg.

Diode Arrays Feature Summary

High surge current capability for robust transient handling
Isolated to plate construction for enhanced safety
Not sensitive to electrostatic discharge

Diode Arrays Applications

Switch mode power supplies
High frequency DC to DC converters
Low voltage high frequency inverters
Free wheeling operation circuits
Welding equipment
Telecom power supplies

Diode Arrays Procurement Notes

Verify the specific part number against official datasheets to confirm electrical ratings and package dimensions. Ensure compatibility with thermal management requirements, as the junction-to-case thermal resistance is specified at 0.80 °C/W per leg. Confirm that the application environment stays within the -55 °C to 150 °C operating temperature range. Check for RoHS compliance status if required by local regulations.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop and high current capacity are required in a compact through-hole package. The 30 V rating suits low voltage applications where efficiency is critical. Consider the TO-249AB form factor for chassis mounting needs. Evaluate the 1000 A surge capability against potential inrush currents in the target circuit design.

Diode Arrays Part Context

This device belongs to the FST12020 through FST12040 series of silicon power Schottky diodes. The series shares common physical dimensions and thermal characteristics while varying in reverse voltage ratings from 20 V to 40 V. All variants maintain a 120 A average forward current rating and utilize the same isolated TO-249AB package structure for consistent mechanical integration.