G16P03D3

$0.85

Description：P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ee80c17539d4 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G16P03D3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is P30V,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G16P03D3

Description：P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2805 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：55W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (3.15x3.05)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for G16P03D3

G16P03D3

Single FETs, MOSFETs Overview

The G16P03D3 is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of -30V, a continuous drain current of -45A, and a maximum power dissipation of 55W. Key electrical parameters include an on-resistance of less than 12mΩ at VGS=-10V and less than 16mΩ at VGS=-4.5V. It is housed in a DFN3X3-8L package.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for excellent RDS(ON) and low gate charge
100% avalanche tested for rugged performance
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging format. Confirm that the component is sourced from authorized channels to ensure authenticity. Check datasheet revisions for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and fast switching within a 30V system. Ensure the operating junction temperature remains within the specified range. Verify that the gate drive voltage meets the requirements for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor P-Channel MOSFET family. It is designed for surface-mount applications using the DFN3X3-8L package. The device is suitable for power management circuits where low conduction losses are critical.