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GA060TH65 is listed in the SCRs - Modules range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is MOD THYRSTR SIC SGL 6500V SOT227. Review the specifications below when checking this part for your BOM.
The GA060TH65 is a Silicon Carbide (SiC) NPNP thyristor rated for a repetitive peak forward voltage of 6500 V and a maximum average on-state current of 60 A. It features an RMS on-state current of 104 A and operates within a temperature range of -55 °C to +150 °C. The device utilizes a SOT-227 (ISOTOP) package with a junction-to-case thermal resistance of 0.136 °C/W. Electrical characteristics include a gate trigger current of -100 mA, a typical rise time of 170 ns, and a circuit commutated turn-off time of 6.7 µs.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct electrical ratings and packaging configuration. Confirm availability status as distribution channels may vary. Check RoHS compliance details directly from the datasheet before procurement.
Select this component for high-voltage applications requiring fast switching speeds and low reverse recovery charge. Ensure the heat sink surface is optically flat to meet mounting torque specifications of 1.5 Nm for the base and 1.3 Nm for the top. Verify that the operating temperature remains within the specified -55 °C to +150 °C range.
This part belongs to the GeneSiC Semiconductor silicon carbide thyristor family. It is designed for high-power conversion systems where efficiency and thermal performance are critical. The ISOTOP form factor facilitates direct mounting to cold plates or heatsinks for effective thermal management in industrial environments.
No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternatives based on matching voltage ratings, current capabilities, and package dimensions if replacement is necessary.
The maximum average on-state current is 60 A at a case temperature of 120 °C.
The recommended mounting torque for the base is 1.5 Nm, requiring an optically flat heat sink surface.
The typical reverse recovery charge (Qrr) is 2.95 µC.
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