GA060TH65

$1,487.50

Description：MOD THYRSTR SIC SGL 6500V SOT227
Series：-

SKU:f60f1790eef9 Category: SCRs - Modules Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOD THYRSTR SIC SGL 6500V SOT227
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Structure：Single
Number of SCRs, Diodes：1 SCR
Voltage - Off State：6.5 kV
Current - On State (It (AV)) (Max)：60 A
Current - On State (It (RMS)) (Max)：104 A
Current - Non Rep. Surge 50, 60Hz (Itsm)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-227-2
Voltage - Gate Trigger (Vgt) (Max)：-
Current - Gate Trigger (Igt) (Max)：100 mA
Current - Hold (Ih) (Max)：-
Grade：-
Qualification：-

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GA060TH65

Overview

The GA060TH65 is a Silicon Carbide (SiC) NPNP thyristor rated for a repetitive peak forward voltage of 6500 V and a maximum average on-state current of 60 A. It features an RMS on-state current of 104 A and operates within a temperature range of -55 °C to +150 °C. The device utilizes a SOT-227 (ISOTOP) package with a junction-to-case thermal resistance of 0.136 °C/W. Electrical characteristics include a gate trigger current of -100 mA, a typical rise time of 170 ns, and a circuit commutated turn-off time of 6.7 µs.

Feature Summary

Robust compact fully soldered package
Fast turn on characteristics
Lowest in class Qrr/IT(AVM)

Applications

Grid Tied Solar Inverters
Wind Power Inverters
HVDC Power Conversion
Utility Scale Power Conversion
Trigger Circuits/Ignition Circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct electrical ratings and packaging configuration. Confirm availability status as distribution channels may vary. Check RoHS compliance details directly from the datasheet before procurement.

Selection Notes

Select this component for high-voltage applications requiring fast switching speeds and low reverse recovery charge. Ensure the heat sink surface is optically flat to meet mounting torque specifications of 1.5 Nm for the base and 1.3 Nm for the top. Verify that the operating temperature remains within the specified -55 °C to +150 °C range.

Part Context

This part belongs to the GeneSiC Semiconductor silicon carbide thyristor family. It is designed for high-power conversion systems where efficiency and thermal performance are critical. The ISOTOP form factor facilitates direct mounting to cold plates or heatsinks for effective thermal management in industrial environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternatives based on matching voltage ratings, current capabilities, and package dimensions if replacement is necessary.