GA100JT17-227

$213.56

Description：TRANS SJT 1700V 160A SOT227
Series：-
Mfr：GeneSiC Semiconductor
Package：Tube

SKU:28de153d5818 Category: Single FETs, MOSFETs Brand: GeneSiC Semiconductor

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Product introduction

GA100JT17-227 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is TRANS SJT 1700V 160A SOT227. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GA100JT17-227

Description：TRANS SJT 1700V 160A SOT227
Series：-
Mfr：GeneSiC Semiconductor
Package：Tube
FET Type：-
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：10mOhm @ 100A
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：14400 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：535W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for GA100JT17-227

GA100JT17-227

Single FETs, MOSFETs Overview

The GA100JT17-227 is a Silicon Carbide Junction Transistor manufactured by GeneSiC Semiconductor. It features a drain-to-source voltage rating of 1700 V and supports a continuous current of 160 A. The component utilizes SOT-227 packaging and is designed for chassis mounting. Operating temperatures range from -55°C to +175°C. This device belongs to the SiC Schottky MPS series and complies with RoHS standards.

Single FETs, MOSFETs Feature Summary

Utilizes silicon carbide junction transistor technology for high-performance switching
Engineered for high thermal stability across extended temperature ranges
Designed for robust power handling in industrial applications

Single FETs, MOSFETs Applications

High-voltage power conversion systems
Industrial motor drives
Uninterruptible power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the SOT-227 package dimensions and chassis mounting requirements align with your mechanical design. Ensure thermal management solutions meet the operational limits defined in the official specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capabilities and significant current handling. The silicon carbide construction offers advantages in high-temperature environments compared to traditional silicon devices. Verify compatibility with gate drive circuits and ensure adequate heat sinking for the specified current ratings.

Single FETs, MOSFETs Part Context

This part is part of GeneSiC's portfolio of silicon carbide power semiconductors. It serves as a discrete solution for high-power electronics, distinct from integrated modules. The SOT-227 form factor allows for direct chassis attachment, facilitating efficient thermal dissipation in compact power designs.