GB50MPS17-247

$27.18

Description：DIODE SIL CARB 1700V 216A TO2472
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube

SKU:9549081378e1 Category: Single Diodes Brand: GeneSiC Semiconductor

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Product introduction

GB50MPS17-247 is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE SIL CARB 1700V 216A TO2472. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for GB50MPS17-247

Description：DIODE SIL CARB 1700V 216A TO2472
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1700 V
Current - Average Rectified (Io)：216A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 50 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：60 µA @ 1700 V
Capacitance @ Vr, F：3193pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for GB50MPS17-247

GB50MPS17-247

Single Diodes Overview

The GB50MPS17-247 is a Silicon Carbide Schottky MPS™ diode rated for 1700 V repetitive peak reverse voltage and 50 A continuous forward current at 152°C. It features a TO-247-2 package with a thermal resistance of 0.22 °C/W. Electrical characteristics include a maximum forward voltage of 2.1 V at 175°C, a total capacitive charge of 538 nC at 1200 V, and a switching time under 10 ns at 600 V. The device supports an operating temperature range from -55°C to 175°C.

Single Diodes Feature Summary

Enhanced surge and avalanche robustness
Temperature independent fast switching
Positive temperature coefficient of forward voltage
Zero reverse recovery current

Single Diodes Applications

EV Fast Chargers
Solar Inverters
Wind Energy Converters
Motor Drives
Switched Mode Power Supplies

Single Diodes Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm compliance requirements such as RoHS and REACH declarations directly with GeneSiC Semiconductor representatives. Ensure that mounting torque specifications are strictly adhered to during assembly to maintain thermal performance and mechanical integrity.

Single Diodes Selection Notes

Select this component for high-voltage applications requiring low thermal resistance and high reliability. Evaluate the derating curves for continuous forward current based on the expected case temperature and duty cycle. Consider the positive temperature coefficient for ease of paralleling multiple devices without thermal runaway risks in high-power density systems.

Single Diodes Part Context

This part belongs to the GeneSiC Semiconductor SiC Schottky MPS™ diode family. It utilizes silicon carbide technology to achieve superior figure of merit compared to traditional silicon rectifiers. The TO-247-2 through-hole package facilitates efficient heat dissipation for industrial power electronics.