GD2X60MPS06N

Diode Arrays Overview

The GD2X60MPS06N is a Silicon Carbide Schottky MPS diode rated at 650 V repetitive peak reverse voltage and 120 A continuous forward current. It utilizes Gen4 thin chip technology to achieve low forward voltage and superior figure of merit. The device features zero reverse recovery current, temperature-independent fast switching, and high dV/dt ruggedness up to 200 V/ns. Packaged in an SOT-227 housing with an isolated base, it supports operating junction temperatures from -55°C to 175°C.

Diode Arrays Feature Summary

• Gen4 Thin Chip Technology for Low Forward Voltage
• Zero Reverse Recovery Current
• Temperature Independent Fast Switching
• High dV/dt Ruggedness

Diode Arrays Applications

• Power Factor Correction (PFC)
• Electric Vehicles and Battery Chargers
• Solar Inverters
• Switched Mode Power Supply (SMPS)

Diode Arrays Procurement Notes

Verify the specific manufacturing lot date code against the latest GeneSiC Semiconductor datasheet revision history before procurement. Confirm that the SOT-227 package mounting torque requirements align with your heatsink interface specifications. Ensure compliance documentation matches current RoHS and REACH directives for your target market.

Diode Arrays Selection Notes

Select this component for high-frequency power conversion applications requiring minimal switching losses. The positive temperature coefficient of forward voltage facilitates easy parallel operation without thermal runaway. Evaluate the thermal resistance characteristics against your system's cooling capabilities to ensure reliable operation within the specified temperature range.

Diode Arrays Part Context

This part belongs to the GeneSiC SiC Schottky MPS diode family, designed for high-efficiency power electronics. The manufacturer emphasizes robust performance in automotive and industrial environments. The device integrates advanced silicon carbide material properties to deliver superior reliability compared to traditional silicon counterparts.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the official documentation.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The maximum non-repetitive avalanche energy rating is 548 mJ when tested with an inductance of 0.3 mH and a current of 60 A.

Does the device exhibit reverse recovery charge?

No, the device exhibits zero reverse recovery current due to its Schottky construction.

What is the isolation voltage specification?

The isolation voltage is 3000 V RMS for 1 second or 2500 V RMS for 60 seconds at 50/60 Hz.