GE2X8MPS06D

Diode Arrays Overview

The GE2X8MPS06D is a silicon carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a dual common cathode configuration housed in a TO-247-3 package for through-hole mounting. The device supports a repetitive reverse voltage of 650 V and handles a total forward current of 38 A, with each leg rated at 8 A. Key electrical parameters include a maximum forward voltage of 1.25 V, a reverse leakage current of 10 uA, and a forward surge current capability of 70 A. It operates within a temperature range of -55 C to +175 C.

Diode Arrays Feature Summary

• Dual common cathode structure enables efficient parallel operation without thermal runaway risks.
• Silicon Carbide (SiC) construction provides superior avalanche robustness and low device capacitance.
• Temperature-independent switching behavior ensures consistent performance across the operating range.

Diode Arrays Applications

• Switched-mode power supplies (SMPS)
• Electric vehicle (EV) systems
• Motor drives
• High-voltage sensing circuits

Diode Arrays Procurement Notes

Verify the manufacturer part number against official GeneSiC Semiconductor documentation to confirm the dual common cathode configuration and TO-247-3 package type. Ensure that the procurement source provides valid RoHS compliance data and authentic datasheets. Cross-reference the specific suffix codes if applicable to confirm pinout and electrical ratings match the intended design requirements before ordering.

Diode Arrays Selection Notes

Select this component when a dual-diode solution is required in a single package to save board space. The 650V rating suits medium-voltage applications, while the 38A total current capacity supports high-power designs. Consider the TO-247-3 package for its thermal management capabilities in through-hole implementations compared to surface-mount alternatives.

Diode Arrays Part Context

This device belongs to the 650V SiC Schottky MPS™ Diode series from GeneSiC Semiconductor. These diodes are designed to combine excellent forward and switching characteristics with best-in-class surge current robustness. The series is engineered for high-efficiency power conversion applications requiring reliable operation at elevated temperatures.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Evaluate other dual common cathode SiC Schottky diodes with matching 650V ratings and compatible TO-247-3 packages for potential cross-referencing.

Diode Arrays FAQ

What is the internal configuration of the GE2X8MPS06D?

It is a dual common cathode silicon carbide Schottky MPS diode.

Does this device exhibit thermal runaway issues when paralleled?

No, a key advantage of these diodes is the ease of paralleling devices without thermal runaway.