Single FETs, MOSFETs GS65R030Q4A product image

GS65R030Q4A

$12.85
  • Description:SiC MOSFET N-CH 650V 70A TO-247
  • Series:TrenchFET®
  • Mfr:Goford Semiconductor
  • Package:Tube

SKU:b4c3a53ed6ce Category: Brand:

  
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GS65R030Q4A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is SiC MOSFET N-CH 650V 70A TO-247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GS65R030Q4A

  • Description:SiC MOSFET N-CH 650V 70A TO-247
  • Series:TrenchFET®
  • Mfr:Goford Semiconductor
  • Package:Tube
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-4L
  • Package / Case:TO-247-4

Single FETs, MOSFETs datasheet and documents for GS65R030Q4A

GS65R030Q4A

Single FETs, MOSFETs Overview

The GS65R030Q4A is an N-channel Silicon Carbide (SiC) MOSFET manufactured by Goford Semiconductor. It features a 650V drain-source voltage rating and supports a continuous drain current of 70A. The device is housed in a TO-247 package, specifically the TO-247-4 configuration, which facilitates efficient thermal management for high-power applications.

Single FETs, MOSFETs Feature Summary

  • Utilizes Silicon Carbide technology for superior switching performance compared to traditional silicon devices
  • Designed for higher reliability in demanding power conversion environments
  • Optimized for low on-resistance characteristics within its voltage class

Single FETs, MOSFETs Applications

  • Automotive power electronics systems
  • Industrial motor drives and inverters
  • High-efficiency consumer power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and marking code when sourcing. Confirm that the TO-247-4 pinout matches your PCB layout requirements. Ensure compatibility with your thermal design constraints given the 70A current rating. Cross-reference official Goford documentation for any recent revisions to electrical parameters or mechanical dimensions before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with reduced switching losses. The SiC material offers advantages in high-frequency operation. Consider the TO-247-4 package for its robust mounting and thermal dissipation capabilities. Evaluate system efficiency gains against potential gate drive complexity associated with wide-bandgap semiconductors.

Single FETs, MOSFETs Part Context

This part belongs to Goford's GS6 series of Silicon Carbide MOSFETs. The series targets automotive, industrial, and general electronics markets. It represents a shift towards wider-bandgap materials to improve power density and efficiency in modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as the GS65R045Q4A from the same manufacturer family. Verify pin compatibility and electrical parameter overlaps before substituting with components from other vendors.

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