GSD2004S-G3-08

Diode Arrays Overview

The GSD2004S-G3-08 is a dual in-series small signal high voltage switching diode manufactured by Vishay General Semiconductor - Diodes Division. It utilizes silicon epitaxial planar technology and is housed in an SOT-23 surface-mount package. The device features a continuous reverse voltage of 240 V, a peak repetitive reverse voltage of 300 V, and a maximum forward current of 350 mA. Electrical characteristics include a typical reverse recovery time of 50 ns, a leakage current of 100 nA at 240 V, and a diode capacitance of 2 pF at 0 V and 1 MHz.

Diode Arrays Feature Summary

• Dual in-series configuration designed for applications requiring high voltage capability
• Fast switching performance with low reverse recovery time
• Molding compound meets UL 94 V-0 flammability rating

Diode Arrays Applications

• High voltage switching circuits
• General purpose fast switching applications

Diode Arrays Procurement Notes

Verify the specific ordering code suffix to confirm packaging quantity and reel size. The G3 suffix indicates compliance with RoHS 3 standards and defines the commercial grade material categorization. Confirm that the AEC-Q101 automotive qualification is not included in this standard part number unless explicitly requested from the manufacturer.

Diode Arrays Selection Notes

Select this component when a compact dual-diode solution is required for high-voltage isolation or clamping within a limited board space. The SOT-23 package provides a low-profile footprint suitable for dense surface-mount layouts. Ensure the operating temperature range of -55 °C to +150 °C aligns with the thermal environment of the target application.

Diode Arrays Part Context

This component belongs to the GSD2004S series of dual in-series switching diodes. It shares the same electrical specifications and physical dimensions as the non-green variant GSD2004S-G, differing primarily in the environmental compliance and material categorization defined by the G3 suffix. The series is engineered for robust performance in high-voltage signal processing environments.

Diode Arrays Replacement Considerations

The GSD2004S-G serves as the direct predecessor to the GSD2004S-G3-08. Both parts share identical electrical ratings and mechanical dimensions. Verify that the replacement source confirms the transition to green manufacturing processes without altering the functional parameters.

Diode Arrays FAQ

Is the GSD2004S-G3-08 qualified for automotive applications?

No, the standard GSD2004S-G3-08 part number does not include AEC-Q101 qualification. Automotive-qualified versions are available upon request directly from the manufacturer.

What is the maximum junction temperature for this device?

The maximum operating junction temperature (Tj) for the GSD2004S-G3-08 is specified as 150 °C.

How is the internal circuitry configured within the SOT-23 package?

The device contains two diodes connected in series internally, sharing a common cathode connection on pin 2, with the anodes on pins 1 and 3.