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GSFW3004 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 0.40A, 30V. Review the specifications below when checking this part for your BOM.
The GSFW3004 is a 30V N-Channel MOSFET manufactured by Good-Ark Semiconductor, housed in an SOT-883 package. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 400mA at TC=25°C. The device exhibits a low on-resistance (RDS(ON)) of 560mΩ at VGS=4.5V and ID=0.2A. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 0.5V to 1.2V, a total gate charge (Qg) of up to 5.2nC, and a reverse recovery time (Trr) of 13ns. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific marking code corresponding to the production lot when ordering, as indicated by the X** notation in the order information. Confirm that the SOT-883 tape and reel packaging meets your automated assembly requirements. Ensure compatibility with the specified thermal management conditions for continuous drain current ratings.
Select this component for circuits requiring a 30V N-Channel MOSFET with compact SOT-883 footprint. Consider the 560mΩ RDS(ON) at 4.5V drive for low-loss switching. Evaluate the 400mA continuous current limit against peak load demands. Verify that the 1.2V maximum gate threshold voltage aligns with the logic level control signals available in the design.
Good-Ark Semiconductor produces discrete semiconductor devices including MOSFETs and diodes. The GSFW3004 belongs to their low-voltage N-Channel MOSFET lineup, designed for modern electronics requiring small form factors and efficient power handling. The manufacturer provides detailed datasheets specifying absolute maximum ratings and electrical characteristics for integration support.
No public confirmed substitute part numbers are documented in the provided source material.
The maximum gate-source voltage (VGS) is rated at ±12V.
The typical reverse recovery time (Trr) is 13ns under specified test conditions.
The normalized on-resistance increases as the junction temperature rises, as illustrated in the normalized RDSON vs. TJ characteristic curve.
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