Single FETs, MOSFETs GSFW3004 product image

GSFW3004

$0.20
  • Description:MOSFET, N-CH, SINGLE, 0.40A, 30V
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:709eefbf5088 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

GSFW3004 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 0.40A, 30V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSFW3004

  • Description:MOSFET, N-CH, SINGLE, 0.40A, 30V
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:560mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:72.9 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):155mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-883
  • Package / Case:SC-101, SOT-883

Single FETs, MOSFETs datasheet and documents for GSFW3004

GSFW3004

Single FETs, MOSFETs Overview

The GSFW3004 is a 30V N-Channel MOSFET manufactured by Good-Ark Semiconductor, housed in an SOT-883 package. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 400mA at TC=25°C. The device exhibits a low on-resistance (RDS(ON)) of 560mΩ at VGS=4.5V and ID=0.2A. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 0.5V to 1.2V, a total gate charge (Qg) of up to 5.2nC, and a reverse recovery time (Trr) of 13ns. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced MOSFET process technology for high cell density
  • Designed for high efficiency switched mode power supplies
  • Features low on-resistance combined with low gate charge
  • Provides fast switching capabilities and reverse body recovery

Single FETs, MOSFETs Applications

  • High efficiency switch mode power supplies
  • General purpose switching applications requiring low voltage operation

Single FETs, MOSFETs Procurement Notes

Verify the specific marking code corresponding to the production lot when ordering, as indicated by the X** notation in the order information. Confirm that the SOT-883 tape and reel packaging meets your automated assembly requirements. Ensure compatibility with the specified thermal management conditions for continuous drain current ratings.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 30V N-Channel MOSFET with compact SOT-883 footprint. Consider the 560mΩ RDS(ON) at 4.5V drive for low-loss switching. Evaluate the 400mA continuous current limit against peak load demands. Verify that the 1.2V maximum gate threshold voltage aligns with the logic level control signals available in the design.

Single FETs, MOSFETs Part Context

Good-Ark Semiconductor produces discrete semiconductor devices including MOSFETs and diodes. The GSFW3004 belongs to their low-voltage N-Channel MOSFET lineup, designed for modern electronics requiring small form factors and efficient power handling. The manufacturer provides detailed datasheets specifying absolute maximum ratings and electrical characteristics for integration support.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGS) is rated at ±12V.

What is the reverse recovery time of the internal body diode?

The typical reverse recovery time (Trr) is 13ns under specified test conditions.

How does the on-resistance vary with temperature?

The normalized on-resistance increases as the junction temperature rises, as illustrated in the normalized RDSON vs. TJ characteristic curve.

GSFW3004GSFW3004
$0.20
Buy Now

Recent News