GT130N10M

$1.37

Description：MOSFET N-CH 100V 60A TO-263
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1db217ed59d0 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT130N10M is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 100V 60A TO-263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT130N10M

Description：MOSFET N-CH 100V 60A TO-263
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1222 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：73.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for GT130N10M

GT130N10M

Single FETs, MOSFETs Overview

The GT130N10M is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a drain-source voltage (VDS) of 100 V, a continuous drain current (ID) of 60 A at 25°C case temperature, and a maximum on-resistance (RDS(on)) of 12 mΩ at VGS = 10V. It is housed in a TO-263 package with a thermal resistance junction-to-case (RthJC) of 1.7 °C/W. The component supports a single pulse avalanche energy of 43 mJ and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized conduction and switching performance
100% avalanche tested for enhanced reliability under transient conditions
Low gate charge characteristics suitable for high-frequency applications

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (A1816-V1.0) against your design requirements. Confirm that the TO-263 packaging aligns with your PCB footprint and thermal management strategy. Ensure the 12 mΩ RDS(on) maximum limit meets your efficiency targets at the intended operating current. Check RoHS compliance status if required by your manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and 60 A continuous current capability are required in a surface-mount TO-263 package. The low thermal resistance of 1.7 °C/W makes it suitable for applications requiring efficient heat dissipation to the case. Consider the 12 mΩ maximum on-resistance for power loss calculations at VGS = 10V. The 100% avalanche testing ensures robustness against inductive load switching events.

Single FETs, MOSFETs Part Context

This part belongs to Goford Semiconductor's N-Channel Enhancement Mode Power MOSFET lineup. It is designed using advanced trench technology to provide superior performance compared to standard planar devices. The series focuses on delivering low on-resistance and low gate charge for efficient power conversion.