HERF1005G

Diode Arrays Overview

The HERF1005G is a high-speed ultrafast recovery rectifier diode array manufactured by Taiwan Semiconductor Corporation. It features a common cathode configuration housed in an isolated TO-220AB (ITO-220AB) through-hole package. The device supports a maximum repetitive reverse voltage of 400 V and an average forward current of 10 A. Key electrical specifications include a maximum non-repetitive peak surge current of 150 A, a typical reverse recovery time of 50 ns, and a maximum forward voltage drop of 1.30 V at rated conditions.

Diode Arrays Feature Summary

• Ultrafast recovery characteristics for efficient high-frequency switching applications
• Common cathode dual diode configuration within a single isolated package
• Robust thermal performance via the TO-220AB leaded housing

Diode Arrays Applications

• High-frequency DC/DC converters
• Free-wheeling rectification in power supplies
• Snubber circuits in motor drives

Diode Arrays Procurement Notes

Verify the specific suffix designation against official Taiwan Semiconductor documentation to confirm exact binning or testing criteria. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the package marking with the datasheet to distinguish between genuine components and potential counterfeits before finalizing orders.

Diode Arrays Selection Notes

Select this component when designs require fast switching speeds combined with moderate current handling capabilities. The 400 V rating suits general-purpose AC-DC conversion stages. Consider the TO-220AB footprint for board space availability and verify that the thermal management strategy accommodates the 10 A continuous current rating under expected ambient conditions.

Diode Arrays Part Context

This part belongs to the HERF series of ultrafast recovery rectifiers from Taiwan Semiconductor. The series is designed for applications demanding rapid turn-off times to minimize switching losses. The HERF1005G specifically addresses needs for compact, high-performance discrete solutions in power electronics where standard recovery diodes would introduce excessive reverse recovery charge.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for direct equivalents. Verify that any substitute matches the 400 V reverse voltage, 10 A forward current, and 50 ns reverse recovery time specifications. Ensure the replacement package maintains the same pinout and thermal dissipation characteristics.