Diode Arrays HERF1008GH product image

HERF1008GH

$1.05
  • Description:DIODE ARR GP 1000V 10A ITO220AB
  • Series:-

SKU:220e1ccc1680 Category: Brand:

  
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HERF1008GH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR GP 1000V 10A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HERF1008GH

  • Description:DIODE ARR GP 1000V 10A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1000 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):80 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 1000 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for HERF1008GH

HERF1008GH

Diode Arrays Overview

The HERF1008GH is a single standard recovery diode manufactured by Taiwan Semiconductor Corporation. It features a maximum DC reverse voltage of 1000 V and an average rectified forward current of 10 A per diode. The component utilizes an ITO-220AC through-hole package, specifically TO-220-2 full pack. Electrical characteristics include a maximum reverse leakage current of 10 µA at 600 V and a typical forward voltage of 1.7 V at 10 A. The device exhibits a reverse recovery time of 80 ns and operates within a junction temperature range of -55°C to 150°C.

Diode Arrays Feature Summary

  • Certified for automotive applications under the AEC-Q101 qualification standard.
  • Designed with fast recovery technology suitable for high-frequency switching operations.
  • Constructed using standard silicon planar dielectric isolation techniques.

Diode Arrays Applications

  • Automotive power supply circuits
  • High-voltage rectification in industrial inverters
  • DC-DC converter output stages

Diode Arrays Procurement Notes

Verify the specific suffix 'GH' against the manufacturer's official datasheet to confirm the exact marking code and packaging configuration. Ensure that the ITO-220AC footprint matches the target PCB design requirements. Confirm compliance with RoHS3 directives if environmental regulations apply to the final assembly process.

Diode Arrays Selection Notes

Select this component when a 1000 V blocking capability is required alongside a 10 A continuous current rating. The ITO-220AC package provides robust thermal dissipation for high-power applications. Consider the 80 ns reverse recovery time for efficiency in high-frequency switching environments compared to standard recovery alternatives.

Diode Arrays Part Context

This part belongs to the HERAF1008G series of fast recovery diodes produced by Taiwan Semiconductor Corporation. The series offers various voltage ratings within the same current class, allowing designers to select appropriate breakdown voltages while maintaining consistent thermal and mechanical mounting characteristics across the product line.

Diode Arrays Replacement Considerations

Consult the official datasheet for electrically equivalent parts within the same family or from other manufacturers. Verify pinout compatibility and thermal resistance values before substituting to ensure circuit performance remains unaffected.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

Is this component qualified for automotive use?

Yes, the HERF1008GH is AEC-Q101 qualified for automotive applications.

What is the reverse recovery time specification?

The specified reverse recovery time (trr) is 80 ns.

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