HFA08TA60C

Diode Arrays Overview

The HFA08TA60C is a HEXFRED ultrafast soft recovery diode featuring a common cathode configuration with two internal elements. It provides a maximum repetitive reverse voltage of 600 V and supports a continuous forward current of 4 A per leg (8 A total). The device exhibits a typical reverse recovery time of 17 ns at 25 °C, with a peak reverse recovery charge of 40 nC. Maximum forward voltage drop is rated at 1.8 V at 4 A. It operates within a junction temperature range of -55 °C to +150 °C and utilizes a TO-220AB package.

Diode Arrays Feature Summary

• Ultrafast soft recovery characteristics designed to minimize switching noise and electromagnetic interference.
• Extremely low peak reverse recovery current and stored charge to reduce power loss in both the diode and associated switching transistors.
• Robust construction suitable for high-frequency operation without snap-off behavior during recovery.

Diode Arrays Applications

• Companion diodes for IGBTs and MOSFETs in high-speed switching circuits.
• High-efficiency power supplies and DC-DC converters.
• Inverters and motor drive systems requiring fast rectification.

Diode Arrays Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm exact electrical tolerances and packaging variations. Ensure thermal management designs account for the specified junction-to-case resistance values under actual operating conditions. Confirm RoHS compliance status if required by local regulations.

Diode Arrays Selection Notes

Select this component when low reverse recovery charge and ultrafast transition times are critical for system efficiency. Evaluate thermal constraints carefully, as power dissipation increases significantly at higher ambient temperatures or elevated duty cycles compared to standard recovery diodes.

Diode Arrays Part Context

This part belongs to the HEXFRED product line from Vishay High Power Products. It represents an epitaxial silicon technology optimized for center-tap applications. The series focuses on reducing snubbing requirements and heatsink sizes through superior dynamic recovery performance compared to legacy rectifiers.

Diode Arrays Replacement Considerations

MUR860

Diode Arrays FAQ

Does the HFA08TA60C exhibit snap-off behavior during reverse recovery?

No, the HEXFRED technology ensures ultrasoft recovery without any tendency to snap-off during the tb portion of the recovery cycle.

What is the maximum repetitive rate of fall of recovery current?

The peak rate of fall of recovery current (dI(rec)M/dt) is typically 280 A/µs at 25 °C and 235 A/µs at 125 °C.