Diode Arrays HFA100MD60C product image

HFA100MD60C

$26.37
  • Description:DIODE MODULE GP 600V 83A TO244AB
  • Series:HEXFRED®

SKU:773c5a0edbc5 Category: Brand:

  
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HFA100MD60C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE MODULE GP 600V 83A TO244AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HFA100MD60C

  • Description:DIODE MODULE GP 600V 83A TO244AB
  • Series:HEXFRED®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):83A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.4 V @ 50 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):115 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 600 V
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-244AB
  • Supplier Device Package:TO-244AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for HFA100MD60C

HFA100MD60C

Diode Arrays Overview

The HFA100MD60C is a HEXFRED ultrafast, soft recovery diode module manufactured by Vishay General Semiconductor - Diodes Division. It features a TO-244AB isolated package with two series-connected elements and a center tap cathode. The device supports a maximum repetitive reverse voltage of 600 V and a continuous forward current of 83 A per leg at 25°C case temperature. Key electrical characteristics include a typical reverse recovery time of 33 ns and a peak reverse recovery current of 8.0 A under standard test conditions.

Diode Arrays Feature Summary

  • Optimized for high-frequency power conditioning systems to reduce switching losses and electromagnetic interference.
  • Features soft recovery behavior that typically eliminates the need for external snubber circuits.
  • Includes extensive characterization of recovery parameters across varying currents, temperatures, and di/dt values.

Diode Arrays Applications

  • High-frequency power converters
  • Motor drives
  • Applications where switching losses constitute a significant portion of total system losses

Diode Arrays Procurement Notes

Verify the specific datasheet revision (PD-2.442 rev. B) against your design requirements. Confirm thermal interface preparation instructions, specifically regarding mounting surface smoothness and grease application. Ensure torque limits are strictly adhered to during installation to maintain performance and reliability.

Diode Arrays Selection Notes

Select this component when designing systems requiring reduced RFI and EMI without complex snubbing. Evaluate thermal impedance curves for pulse duration duty cycles. Consider the 7 nH series inductance impact on circuit dynamics. Verify junction temperature limits relative to the specified avalanche energy rating.

Diode Arrays Part Context

This module belongs to the HEXFRED family of ultrafast recovery diodes designed for efficiency in power electronics. It utilizes silicon technology within an isolated flange-mount configuration. The dual-element structure allows for center-tap applications, providing flexibility in bridge or rectifier topologies.

Diode Arrays Replacement Considerations

No verified public substitute part numbers are available in the provided documentation.

Diode Arrays FAQ

What is the typical reverse recovery time for the HFA100MD60C?

The typical reverse recovery time (trr) is 33 ns, measured at IF = 1.0A, di/dt = 200A/µs, and VR = 30V.

How does the soft recovery characteristic benefit the circuit design?

The soft recovery eliminates the need for a snubber in most applications, thereby reducing component count and potential sources of electromagnetic interference.

What is the maximum non-repetitive avalanche energy rating?

The non-repetitive avalanche energy (EAS) is rated at 220 µJ, tested with L = 100µH and a duty cycle limited by the maximum junction temperature.

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