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HFA100MD60C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE MODULE GP 600V 83A TO244AB. Review the specifications below when checking this part for your BOM.
The HFA100MD60C is a HEXFRED ultrafast, soft recovery diode module manufactured by Vishay General Semiconductor - Diodes Division. It features a TO-244AB isolated package with two series-connected elements and a center tap cathode. The device supports a maximum repetitive reverse voltage of 600 V and a continuous forward current of 83 A per leg at 25°C case temperature. Key electrical characteristics include a typical reverse recovery time of 33 ns and a peak reverse recovery current of 8.0 A under standard test conditions.
Verify the specific datasheet revision (PD-2.442 rev. B) against your design requirements. Confirm thermal interface preparation instructions, specifically regarding mounting surface smoothness and grease application. Ensure torque limits are strictly adhered to during installation to maintain performance and reliability.
Select this component when designing systems requiring reduced RFI and EMI without complex snubbing. Evaluate thermal impedance curves for pulse duration duty cycles. Consider the 7 nH series inductance impact on circuit dynamics. Verify junction temperature limits relative to the specified avalanche energy rating.
This module belongs to the HEXFRED family of ultrafast recovery diodes designed for efficiency in power electronics. It utilizes silicon technology within an isolated flange-mount configuration. The dual-element structure allows for center-tap applications, providing flexibility in bridge or rectifier topologies.
No verified public substitute part numbers are available in the provided documentation.
The typical reverse recovery time (trr) is 33 ns, measured at IF = 1.0A, di/dt = 200A/µs, and VR = 30V.
The soft recovery eliminates the need for a snubber in most applications, thereby reducing component count and potential sources of electromagnetic interference.
The non-repetitive avalanche energy (EAS) is rated at 220 µJ, tested with L = 100µH and a duty cycle limited by the maximum junction temperature.
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